×

Semiconductor Power Switches Having Trench Gates

  • US 20100308400A1
  • Filed: 04/29/2009
  • Published: 12/09/2010
  • Est. Priority Date: 06/20/2008
  • Status: Abandoned Application
First Claim
Patent Images

1. A method of fabricating a trench device, comprising:

  • forming a first trench, forming a hardmask layer on sidewalls of said trench, and etching a second trench, which is narrower than said first trench, into the bottom of said first trench;

    growing a dielectric material to substantially fill said second trench, using a reaction process to which said hardmask material is substantially inert; and

    forming a conductive layer over said dielectric material;

    whereby said dielectric material in said second trench provides smooth gradation of voltage differences, within said semiconductor material, which may be caused by potential differences between said gate and various portions of said semiconductor material.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×