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Semiconductor integrated circuit device

  • US 20100308458A1
  • Filed: 07/21/2010
  • Published: 12/09/2010
  • Est. Priority Date: 12/18/2000
  • Status: Active Grant
First Claim
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1. A semiconductor integrated circuit device comprising:

  • circuit elements and wirings which are provided on a main surface of a semiconductor substrate and constitute a semiconductor integrated circuit;

    a first insulating film (150) provided over the circuit elements and the wirings (FIGS. 17,18, on line 10 of page 22-line 16 of page

         24);

    a first pad electrode (04, Metal PAD) and a second pad electrode (04, Metal PAD) provided over the first insulating film (150) (FIGS. 1-7);

    a protective film (203) provided over the circuit except for openings over surfaces of the first and second pad electrodes (FIGS. 15,17,18,19, on line 10 of page 22-line 19 of page

         27);

    a second insulating film (02,204) provided over the protective film (203) except for the openings (FIGS. 15,19); and

    a first conductive layer (05,105,205,305,405,505, WPP WIRING LAYER), for electrically connecting to a first external terminal (03, WPP BUMP), provided over the second insulating film (204) and electrically connected to the first pad electrode and the second pad electrode (FIGS. 1-7).

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