Process for synthesizing a thin film or composition layer via non-contact pressure containment

• US 20100310770A1
• Filed: 03/26/2010
• Published: 12/09/2010
• Est. Priority Date: 06/05/2009
• Status: Abandoned Application

• Current Assignee: HelioVolt Corporation
• Original Assignee: HelioVolt Corporation
• Inventors: Lim, Abner, Sang, Baosheng, Eldada, Louay, Taylor, Matthew
• Application Number:
  US12/661,923
• Publication Number:
  US 20100310770A1
• Time in Patent Office: Days
• US Class Current: 427/255.23
• CPC Class Codes: C23C 14/0623 Sulfides, selenides or tellurides
• CPC Class Codes: C23C 14/5806 Thermal treatment
• CPC Class Codes: C23C 14/5886 Mechanical treatment involving removal of material C23C14/588
• CPC Class Codes: H01L 31/0322 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells

Abstract

A process for synthesizing a thin film or composition layer from a plurality of precursor layers supported on a substrate, includes exposing the plurality of precursor layers to non-contact pressure, and heating the plurality of precursor layers under the non-contact pressure to a reaction temperature sufficient to promote the formation of the film or composition layer.

Claims

1. A process for synthesizing a thin film or composition layer from a plurality of precursor layers supported on a substrate, said process comprising the steps of:

a) exposing said plurality of precursor layers to non-contact pressure; and

b) heating said plurality of precursor layers under said non-contact pressure to a reaction temperature sufficient to promote the formation of said film or composition layer.

2. The process of claim 1 wherein each of said plurality of precursor layers is selected from the elemental series of the periodic table consisting of Group I elements, Group III elements, Group VI elements and combinations thereof.

3. The process of claim 1 wherein each of said plurality of precursor layers is selected from the group consisting of indium, gallium, selenium, copper, sulfur, sodium, and combinations thereof.

4. The process of claim 1 wherein each of said plurality of precursor layers is composed of a form selected from a group consisting of a chemical element, a binary compound, a ternary compound, a multinary compound, and combinations thereof.

5. The process of claim 1 wherein said reaction temperature is at least 100°

C.

6. The process of claim 5 wherein the reaction temperature is from about 300°

C. to 1000°

C.

7. The process of claim 6 wherein the reaction temperature is from about 400°

C. to 700°

C.

8. The process of claim 1 wherein the non-contact pressure is at least 50 Torr.

9. The process of claim 8 wherein the non-contact pressure is from about 100 to 700 Torr.

10. The process of claim 1 wherein the non-contact pressure is fluid pressure.

11. The process of claim 10 wherein the fluid pressure is gas pressure.

12. The process of claim 1 wherein the exposing step further comprises:

enclosing the plurality of precursor layers in a closed volume; and

increasing the pressure within the closed volume to generate the non-contact pressure.

13. The process of claim 12 wherein the pressure increasing step further comprises supplying a fluid into the closed volume, whereby the pressure within the closed volume increases.

14. The process of claim 12 wherein the pressure increasing step further comprises:

adding a vaporizable material in association with the plurality of precursor layers within the closed volume; and

vaporizing the vaporizable material within the closed volume to generate the non-contact pressure.

15. The process of claim 14 wherein the vaporizing step further comprises heating the vaporizable material.

16. The process of claim 14 wherein said vaporizable material is selected from the elemental series of the periodic table consisting of Group I elements, Group III elements, Group VI elements and combinations thereof.

17. The process of claim 14 where said vaporizable material is selected from the group consisting of indium, gallium, selenium, copper, sulfur, sodium, and combinations thereof.

18. The process of claim 1 further comprising the step of depositing the plurality of precursor layers on a substrate.

19. The process of claim 18 wherein the depositing step is carried out via a process selected from the group consisting of vacuum deposition, atmospheric-pressure deposition, and a combination thereof.