PHOTOVOLTAIC MODULES AND METHODS OF MANUFACTURING PHOTOVOLTAIC MODULES HAVING MULTIPLE SEMICONDUCTOR LAYER STACKS
First Claim
Patent Images
1. A monolithically-integrated photovoltaic module comprising:
- an electrically insulating substrate;
a lower stack of microcrystalline silicon layers above the substrate;
a middle stack of amorphous silicon layers above the lower stack;
an upper stack of amorphous silicon layers above the middle stack; and
a light transmissive cover layer disposed above the upper stack, wherein an energy band gap of each of the lower, middle and upper stacks differs from one another such that a different spectrum of incident light is absorbed by each of the lower, middle and upper stacks.
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Abstract
A monolithically-integrated photovoltaic module is provided. The module includes an electrically insulating substrate, a lower stack of microcrystalline silicon layers above the substrate, a middle stack of amorphous silicon layers above the lower stack, an upper stack of amorphous silicon layers above the middle stack, and a light transmissive cover layer above the upper stack. An energy band gap of each of the lower, middle and upper stacks differs from one another such that a different spectrum of incident light is absorbed by each of the lower, middle and upper stacks.
130 Citations
20 Claims
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1. A monolithically-integrated photovoltaic module comprising:
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an electrically insulating substrate; a lower stack of microcrystalline silicon layers above the substrate; a middle stack of amorphous silicon layers above the lower stack; an upper stack of amorphous silicon layers above the middle stack; and a light transmissive cover layer disposed above the upper stack, wherein an energy band gap of each of the lower, middle and upper stacks differs from one another such that a different spectrum of incident light is absorbed by each of the lower, middle and upper stacks. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing a photovoltaic module, the method comprising:
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providing an electrically insulating substrate and a lower electrode; depositing a lower stack of microcrystalline silicon layers above the lower electrode; depositing a middle stack of amorphous silicon layers above the lower stack; depositing an upper stack of amorphous silicon layers above the middle stack; and providing an upper electrode above the upper stack, wherein an energy band gap of each of the lower, middle, and upper stacks differing from one another such that a different spectrum of incident light is absorbed by each of the lower, middle and upper stacks. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification