MICROSTRUCTURED PATTERN INSPECTION METHOD
First Claim
1. A computer-readable medium making computer display measurement results of a semiconductor wafer, based on electrons detected by a scanning electron microscope, the computer implementing steps, the steps comprising:
- obtaining information relating to a measurement value between an upper part of a layer which forms a part of the semiconductor wafer and a lower part of the layer; and
displaying the information for each prescribed area on the semiconductor wafer.
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Accused Products
Abstract
The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
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Citations
1 Claim
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1. A computer-readable medium making computer display measurement results of a semiconductor wafer, based on electrons detected by a scanning electron microscope, the computer implementing steps, the steps comprising:
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obtaining information relating to a measurement value between an upper part of a layer which forms a part of the semiconductor wafer and a lower part of the layer; and displaying the information for each prescribed area on the semiconductor wafer.
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Specification