VANADIUM DIOXIDE NANOWIRE, FABRICATION PROCESS THEREOF, AND NANOWIRE DEVICE USING VANADIUM DIOXIDE NANOWIRE

• US 20100314617A1
• Filed: 05/27/2010
• Published: 12/16/2010
• Est. Priority Date: 06/16/2009
• Status: Abandoned Application

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Ito, Daisuke
• Application Number:
  US12/788,522
• Publication Number:
  US 20100314617A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: B81B 2201/0214 Biosensors; Chemical sensors
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0285 Vibration sensors
• CPC Class Codes: B81B 2201/0292 Sensors not provided for in B81B2201/0207 - B81B2201/0285
• CPC Class Codes: B81B 2203/0361 Tips, pillars
• CPC Class Codes: B81C 1/00111 Tips, pillars, i.e. raised structures microneedles A61M37/0015
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C30B 25/00 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
• CPC Class Codes: C30B 29/16 Oxides
• CPC Class Codes: C30B 29/60 characterised by shape
• CPC Class Codes: H01G 11/22 Electrodes
• CPC Class Codes: H01G 11/46 Metal oxides
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0676 oriented perpendicular or at an angle to a substrate
• CPC Class Codes: H01L 29/22 including, apart from doping materials or other impurities, only AIIBVI compounds
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/66439 with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor with an active layer made of a group 13/15 material H01L29/66469
• CPC Class Codes: H01L 29/66462 with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
• CPC Class Codes: H01L 29/775 with one dimensional charge carrier gas channel, e.g. quantum wire FET
• CPC Class Codes: Y02E 60/13 : Energy storage using capacitors

Abstract

A vanadium dioxide nanowire grown long and thin along a [110] direction is disclosed.

Claims

1. A vanadium dioxide nanowire grown long and thin along a [110] direction.

2. The vanadium dioxide nanowire according to claim 1, wherein the nanowire has a diameter of 2 nm or more and 1 μ

m or less.

19. A nanowire device configured as any one of:

an electronic device including the vanadium dioxide nanowire of claim 1 or 2, and that detects changes in electrical resistance in response to heat, electric field, infrared rays, visible light, electromagnetic waves, pressure, or vibration, or changes in the transmittance or reflectance of infrared rays or visible light;

an electronic device that includes an electrode realized by the vanadium dioxide nanowire; and

a catalytic device in which the vanadium dioxide nanowire is used as a photocatalyst or an alcoholysis catalyst.

20. The nanowire device according to claim 19,

wherein the electronic device is any one of a temperature-detecting sensor device, an acceleration-detecting sensor device, a gas-detecting sensor device, an electromagnetic wave-detecting sensor device, a photo-detecting sensor device, a pressure-detecting sensor device, a field-effect transistor device, a nonvolatile memory device, a photoelectric conversion device, an optical switching device, a heat modulation device, a light modulation device, a switching circuit device, a phototransistor device, and an optical memory device, and

wherein the electrode is anyone of an electrical double layer capacitor electrode, an electrochemical capacitor electrode, and a positive electrode for alkali-ion secondary batteries.

3. A process for fabricating a vanadium dioxide nanowire,

the process comprising:

a first step of forming a transition-metal-atom growth catalyst on a substrate; and

a second step of growing a nanowire of vanadium dioxide on a surface of the substrate heated under reduced pressure in an atmosphere of any one of oxygen gas, inert gas, and a mixed gas of these.

4. The process according to claim 3, wherein the nanowire is grown long and thin along a [110] direction.

5. The process according to claim 3, wherein the substrate surface is a crystal plane having a crystal lattice mismatch rate of 10% or less for the vanadium dioxide.

6. The process according to claim 5, wherein the nanowire grows in a 90°

or 45°

direction with respect to the substrate surface.

7. The process according to claim 6, wherein the nanowire grows in a 90°

direction with respect to the substrate surface when the substrate is tetragonal TiO₂ and when the crystal plane is (110), and grows in a 45°

direction with respect to the substrate surface when the substrate is tetragonal TiO₂ and when the crystal plane is (100).

8. The process according to claim 3, wherein, in the second step, the nanowire is grown under a reduced pressure of 10 Pa or more and 1,000 Pa or less.

9. The process according to claim 3, wherein, in the second step, the substrate is heated to 400°

C. or more and 1,200°

C. or less.

10. The process according to claim 3, wherein, in the second step, the substrate is heated to 730°

C. or more and 1,200°

C. or less, and the nanowire is grown under a reduced pressure of 10 Pa or more and 1,000 Pa or less.

11. The process according to claim 3, wherein nanoparticles or nanodots are used as the growth catalyst, and wherein the transition metal atom is any one of Au, Pt, Ag, Pd, Ru, Fe, Ni, and Cr.

12. The process according to claim 3, wherein the nanowire is grown using a laser vapor deposition method or a heat vapor deposition method, using at least one of an alloy, an oxide, an organic complex compound each containing vanadium as a base element, and a vanadium metal.

13. The process according to claim 3, wherein the diameter of the growth catalyst is controlled to control the diameter of the nanowire.

14. The process according to claim 13, wherein the growth catalyst has a diameter of 10 nm or more and 1 μ

m or less.

15. The process according to claim 3, wherein, in the first step, the growth catalyst is formed in a desired region of the substrate using any one of an etching method, shadow-mask vapor deposition, and a lift-off method.

16. The process according to claim 3, further comprising a third step of removing the growth catalyst at an apical portion of the nanowire.

17. The process according to claim 3, wherein the nanowire includes at least one of a 3d transition metal element, a rare-earth element, Ta, and W as an addition element.

18. The process according to claim 17, wherein the addition element is contained in a content of 5% (atomic fraction) or less.