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THIN FILM TRANSISTOR, METHOD OF PRODUCING THE SAME, ELETCTROOPTIC APPARATUS, AND SENSOR

  • US 20100314618A1
  • Filed: 06/10/2010
  • Published: 12/16/2010
  • Est. Priority Date: 06/11/2009
  • Status: Active Grant
First Claim
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1. A thin film transistor comprising:

  • a substrate; and

    , on the substrate,an oxide semiconductor film which serves as an active layer and comprises In, Ga, and Zn, a gate electrode, a gate insulating film, a source electrode, and a drain electrode,wherein, when a molar ratio of In, Ga, and Zn in the oxide semiconductor film is expressed as In;

    Ga;

    Zn=(2.0−

    x);

    x;

    y, wherein 0.0<

    x<

    2.0 and 0.0<

    y, the distribution of y in the thickness direction of the oxide semiconductor film is such that the oxide semiconductor film has a region in which a value of y is larger than that at a surface of the oxide semiconductor film at a side closer to the substrate and larger than that at a surface of the oxide semiconductor film at a side farther from the substrate.

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