THIN-FILM LED WITH P AND N CONTACTS ELECTRICALL ISOLATED FROM THE SUBSTRATE

• US 20100314649A1
• Filed: 05/28/2010
• Published: 12/16/2010
• Est. Priority Date: 06/10/2009
• Status: Abandoned Application

• Current Assignee: Bridgelux Incorporated
• Original Assignee: Bridgelux Incorporated
• Inventors: LIN, Chao-Kun
• Application Number:
  US12/790,597
• Publication Number:
  US 20100314649A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 2933/0075 relating to heat extraction or cooling elements
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/64 Heat extraction or cooling elements

Abstract

A thin-film LED includes an insulating substrate, an electrode on the insulating substrate, and an epitaxial structure on the electrode.

Claims

1-32. -32. (canceled)

33. A method of manufacturing a thin-film light emitting diode, comprising:

forming an epitaxial structure on a growth substrate, the epitaxial structure comprising a first epitaxial layer, a second epitaxial layer, and an active region between the first epitaxial layer and the second epitaxial layer;

forming an electrode layer on the second epitaxial layer of the epitaxial structure;

attaching a host substrate with a conductive adhesive layer to the electrode layer;

removing the growth substrate; and

removing part of the epitaxial structure to form a mesa with the epitaxial structure and to expose at least one of the second epitaxial layer or the electrode layer.

34. The method of claim 33, wherein the host substrate is an insulating substrate.

35. The method of claim 33, wherein the host substrate is a conductive substrate and an insulating dielectric film layer is between the host substrate and the conductive adhesive layer.

36. The method of claim 33, further comprising roughening a surface of the first epitaxial layer to form micro-structures on the surface, the micro-structures being between about 100 nm and 500 nm in size.

37. The method of claim 36, further comprising:

forming a patterned second electrode on the surface of the first epitaxial layer; and

forming a metal contact on said at least one of the second epitaxial layer or the electrode layer.

38. The method of claim 37, wherein the epitaxial structure is etched to expose the electrode layer and the metal contact is formed on the electrode layer.

39. The method of claim 33, further comprising forming a metal layer on a bottom surface of the host substrate.

40. The method of claim 33, further comprising:

forming an insulating dielectric film layer on a bottom surface of the host substrate; and

forming a metal layer on the insulating dielectric film layer.