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STRAINED LDMOS AND DEMOS

  • US 20100314670A1
  • Filed: 05/27/2010
  • Published: 12/16/2010
  • Est. Priority Date: 05/27/2009
  • Status: Active Grant
First Claim
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1. An integrated circuit containing an extended drain metal oxide semiconductor (MOS) transistor, comprising:

  • a substrate, said substrate having a first conductivity type;

    a drift region of said extended drain MOS transistor, said drift region being located in said substrate, in which said drift region has a second conductivity type opposite from said first conductivity type;

    stressor RESURF trenches formed in said drift region, said stressor RESURF trenches being separated by distances between 200 nanometers and 2 microns, in which said stressor RESURF trenches include;

    stressor elements in said stressor RESURF trenches, so that said stressor elements have stress greater than 100 megapascals (MPa); and

    at least one of;

    dielectric liners in said stressor RESURF trenches contacting said drift region, so that said stressor elements are located on said dielectric liners; and

    filler elements in gaps of said stressor elements.

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