Configurations and methods for manufacturing devices with trench-oxide-nano-tube super-junctions
First Claim
1. A semiconductor power device comprising:
- a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type disposed above the first semiconductor layer;
trenches opened in the second semiconductor layer extending vertically to the first semiconductor layer;
a first epitaxial layer of a first conductivity type formed on sidewalls of the trenches; and
a second epitaxial layer formed on the first epitaxial layer;
wherein the first epitaxial layer is substantially charge balanced with adjacent semiconductor regions.
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Abstract
This invention discloses semiconductor power device disposed on a semiconductor substrate of a first conductivity type. The semiconductor substrate supports an epitaxial layer of a second conductivity type thereon wherein the semiconductor power device is supported on a super-junction structure. The super-junction structure comprises a plurality of trenches opened from a top surface in the epitaxial layer; wherein each of the trenches having trench sidewalls covered with a first epitaxial layer of the first conductivity type to counter charge the epitaxial layer of the second conductivity type. A second epitaxial layer may be grown over the first epitaxial layer. Each of the trenches is filled with a non-doped dielectric material in a remaining trench gap space. Each of the trench sidewalls is opened with a tilted angle to form converging U-shaped trenches.
62 Citations
29 Claims
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1. A semiconductor power device comprising:
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a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type disposed above the first semiconductor layer; trenches opened in the second semiconductor layer extending vertically to the first semiconductor layer; a first epitaxial layer of a first conductivity type formed on sidewalls of the trenches; and a second epitaxial layer formed on the first epitaxial layer; wherein the first epitaxial layer is substantially charge balanced with adjacent semiconductor regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method of forming a semiconductor power device comprising:
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etching trenches in a second semiconductor layer of a second conductivity type; growing a first epitaxial layer of a first conductivity type in said trenches; and growing a second epitaxial layer on top of the first epitaxial layer; wherein a first semiconductor layer of a first conductivity type is provided under said second semiconductor layer and wherein said first epitaxial layer reaches the first semiconductor layer. - View Dependent Claims (24, 25, 26, 27, 28)
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29. A method of forming a dielectric trench comprising:
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forming a network of trenches in a semiconductor layer and filling the trenches with a first dielectric to form a network of dielectric columns with semiconductor mesas contained within; etching away the semiconductor mesas within the network of dielectric columns, and filling the gaps with a second dielectric, thus forming a wide and deep dielectric trench.
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Specification