Reduced Process Sensitivity of Electrode-Semiconductor Rectifiers
First Claim
1. A semiconductor device, comprising:
- a semiconductor layer of a first conductivity type having a first surface, a second surface, and a mesa region, the mesa region having a top surface adjacent to the layer'"'"'s first surface, and a graded net doping concentration of the first conductivity type within a first portion of the mesa region, the graded net doping concentration decreasing in value with distance from the top surface of the mesa region;
a trench electrode extending in the semiconductor layer and adjacent to the mesa region, the trench having an electrically insulated electrode disposed therein and extending from the semiconductor layer'"'"'s first surface toward the semiconductor layer'"'"'s second surface to a first depth below the layer'"'"'s first surface;
a second electrode disposed at the top surface of the mesa region; and
a third electrode electrically coupled to the semiconductor layer; and
wherein the first portion of the mesa region is located within a first distance of the top surface of the semiconductor layer, the first distance being the greater one of one-half micron or one-half the first depth.
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Accused Products
Abstract
Disclosed are semiconductor devices and methods of making semiconductor devices. An exemplary embodiment comprises a semiconductor layer of a first conductivity type having a first surface, a second surface, and a graded net doping concentration of the first conductivity type within a portion of the semiconductor layer. The graded portion is located adjacent to the top surface of the semiconductor layer, and the graded net doping concentration therein decreasing in value with distance from the top surface of the semiconductor layer. The exemplary device also comprises an electrode disposed at the first surface of the semiconductor layer and adjacent to the graded portion.
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Citations
22 Claims
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1. A semiconductor device, comprising:
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a semiconductor layer of a first conductivity type having a first surface, a second surface, and a mesa region, the mesa region having a top surface adjacent to the layer'"'"'s first surface, and a graded net doping concentration of the first conductivity type within a first portion of the mesa region, the graded net doping concentration decreasing in value with distance from the top surface of the mesa region; a trench electrode extending in the semiconductor layer and adjacent to the mesa region, the trench having an electrically insulated electrode disposed therein and extending from the semiconductor layer'"'"'s first surface toward the semiconductor layer'"'"'s second surface to a first depth below the layer'"'"'s first surface; a second electrode disposed at the top surface of the mesa region; and a third electrode electrically coupled to the semiconductor layer; and wherein the first portion of the mesa region is located within a first distance of the top surface of the semiconductor layer, the first distance being the greater one of one-half micron or one-half the first depth. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of making a semiconductor device, the method comprising:
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forming a mesa region of semiconductor material having a top surface and a portion of graded net doping concentration of a first conductivity within a first portion of the mesa region, the graded net doping concentration therein decreasing in value with distance from the top surface of the mesa region; and forming a contact electrode on the top surface of the mesa region. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22)
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Specification