Semiconductor substrate, semiconductor device, and manufacturing methods thereof
First Claim
Patent Images
1. A semiconductor substrate, comprising:
- a substrate;
a first semiconductor layer arranged on the substrate;
a metallic material layer arranged on the first semiconductor layer;
a second semiconductor layer arranged on the first semiconductor layer and the metallic material layer; and
a cavity formed at a portion of the first semiconductor layer under the metallic material layer.
2 Assignments
0 Petitions
Accused Products
Abstract
The present invention provides a method of manufacturing a semiconductor substrate that includes a substrate, a first semiconductor layer arranged on the substrate, a metallic material layer arranged on the first semiconductor layer, a second semiconductor layer arranged on the first semiconductor layer and the metallic material layer, and a cavity formed in the first semiconductor layer under the metallic material layer.
-
Citations
35 Claims
-
1. A semiconductor substrate, comprising:
-
a substrate; a first semiconductor layer arranged on the substrate; a metallic material layer arranged on the first semiconductor layer; a second semiconductor layer arranged on the first semiconductor layer and the metallic material layer; and a cavity formed at a portion of the first semiconductor layer under the metallic material layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 10, 11)
-
-
8. A semiconductor substrate, comprising:
-
a substrate; a first semiconductor layer arranged on the substrate; a second semiconductor layer arranged on the first semiconductor layer; and a cavity formed in the first semiconductor layer. - View Dependent Claims (9)
-
-
12. A method of manufacturing a semiconductor substrate, the method comprising:
-
forming a first semiconductor layer on a substrate; forming a metallic material layer on the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer and the metallic material layer; and forming a cavity in a portion of the first semiconductor layer under the metallic material layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 30, 31, 32, 33, 34)
-
-
22. A method of manufacturing a semiconductor substrate, the method comprising:
-
forming a first semiconductor layer on a substrate; forming a metallic material layer on the first semiconductor layer; forming a first portion of a second semiconductor layer on the first semiconductor layer and the metallic material layer; removing the metallic material layer under the first portion of the second semiconductor layer by dipping the substrate in a solution; forming a second portion of the second semiconductor layer on the first portion of the second semiconductor layer; and forming a cavity in a portion of the first semiconductor layer located under where the metallic material layer was removed. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 35)
-
Specification