THROUGH-SILICON VIA STRUCTURE AND A PROCESS FOR FORMING THE SAME
First Claim
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1. A device, comprising:
- a semiconductor substrate having a front surface and a back surface and including an integrated circuit (IC) component formed on the front surface;
an interlayer dielectric (ILD) layer formed overlying the front surface of the semiconductor substrate;
a contact plug formed in the ILD layer and electrically coupled to the IC component; and
a via structure formed in the ILD layer and extending through the semiconductor substrate, wherein the via structure comprises a metal layer, a metal seed layer surrounding the metal layer, a barrier layer surrounding the metal seed layer, and a metal silicide layer sandwiched between at least a portion of the metal layer and at least a portion of the metal seed layer.
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Abstract
A through-silicon via (TSV) structure and process for forming the same are disclosed. A semiconductor substrate has a front surface and a back surface, and a TSV structure is formed to extend through the semiconductor substrate. The TSV structure includes a metal layer, a metal seed layer surrounding the metal layer, a barrier layer surrounding the metal seed layer, and a metal silicide layer formed in a portion sandwiched between the metal layer and the metal seed layer.
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Citations
20 Claims
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1. A device, comprising:
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a semiconductor substrate having a front surface and a back surface and including an integrated circuit (IC) component formed on the front surface; an interlayer dielectric (ILD) layer formed overlying the front surface of the semiconductor substrate; a contact plug formed in the ILD layer and electrically coupled to the IC component; and a via structure formed in the ILD layer and extending through the semiconductor substrate, wherein the via structure comprises a metal layer, a metal seed layer surrounding the metal layer, a barrier layer surrounding the metal seed layer, and a metal silicide layer sandwiched between at least a portion of the metal layer and at least a portion of the metal seed layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device, comprising:
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a semiconductor substrate having a front surface and a back surface and including an integrated circuit (IC) component formed on the front surface; an interlayer dielectric (ILD) layer formed overlying the front surface of the semiconductor substrate; a contact plug formed in the ILD layer and electrically coupled to the IC component; and a via structure formed in the ILD layer and extending through the semiconductor substrate; wherein the via structure comprises a copper layer, a copper seed layer surrounding the copper layer, a barrier layer surrounding the copper seed layer, and a copper silicide layer sandwiched between at least a portion of the copper layer and at least a portion of the copper seed layer; and wherein the via structure includes an end exposed on the back surface of the semiconductor substrate. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A process, comprising:
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forming an opening extending from a front surface of a semiconductor substrate to at least a part of the semiconductor substrate, wherein the opening has an aspect ratio greater than 5; forming a metal seed layer in the opening, wherein the metal seed layer comprises a sidewall portion adjacent to the sidewall of the opening and a bottom portion adjacent to the bottom of the opening; forming a metal silicide layer on at least a part of the sidewall portion of the metal seed layer; and plating a metal layer on the metal silicide layer and the metal seed layer to fill the opening. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification