SOURCE-MASK OPTIMIZATION IN LITHOGRAPHIC APPARATUS

• US 20100315614A1
• Filed: 06/10/2010
• Published: 12/16/2010
• Est. Priority Date: 06/10/2009
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Hansen, Steven George
• Granted Patent: US 8,786,824 B2
• Time in Patent Office: Days
• US Class Current: 355/67
• CPC Class Codes: G03F 7/70125 Use of illumination settings tailored to particular mask patterns details of setting means G03F7/70091
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions

Abstract

A method for configuring an illumination source of a lithographic apparatus, the method including dividing the illumination source into pixel groups, each pixel group including one or more illumination source points; selecting an illumination shape to expose a pattern, the illumination shape formed with at least one pixel group; ranking the pixel groups according to how a change in state of a pixel group affects a lithographic metric; and for each pixel group in order of ranking, determining whether to adjust the illumination shape by changing the state of the pixel group based on a calculation of the lithographic metric as a result of a change in state of the pixel group.

Claims

1. A method for optimizing an illumination source of a lithographic apparatus and a mask, the method comprising:

dividing the illumination source into a plurality of pixel groups, each pixel group including one or more illumination source points;

dividing the mask into a plurality of mask tiles;

selecting an initial illumination shape for the illumination source;

selecting an initial mask pattern for the mask;

selecting an initial configuration for the at least one lithographic process component;

selecting a lithographic model for photolithographic simulation;

ranking pixel groups in the plurality of pixel groups and mask tiles in the plurality of mask tiles;

for each pixel group in the plurality of pixel groups and each mask tile in the plurality of mask tiles, in order of ranking, performing the steps of;

calculating, based on a result of a photolithographic simulation using the lithographical model, a lithographic metric as a result of an alteration in state of the each pixel group or the each mask tile;

based on a result of the calculation, adjusting an illumination shape of the illumination source by altering a state of the each pixel group to create a modified illumination shape or adjusting a mask pattern of the mask by altering a state of the each mask tile to create a modified mask pattern.

2. The method according to claim 1, wherein:

the step of adjusting an illumination shape of the illumination source by altering a state of at least one pixel group of the illumination source to create a modified illumination shape or adjusting a mask pattern of the mask by altering a state of at least one mask tile of the mask to create a modified mask pattern based on a result of the calculation comprises;

determining whether the calculated lithographic metric indicates an improvement over a previous lithographic metric;

in response to determining that the calculated lithographic metric indicates an improvement over the previous lithographic metric, altering the state of the each pixel group or the each mask tile and updating the previous lithographic metric to be the calculated lithographic metric;

the previous lithographic metric when the each pixel group or each mask tile is the highest-ranked pixel group or mask tile comprises an initial lithographic metric, the initial lithographic metric calculated based on the initial illumination shape and the initial mask pattern.

3. The method according to claim 2, wherein the steps of selecting an initial illumination shape, selecting an initial mask pattern, ranking pixel groups and mask tiles, and calculating a lithographic metric and adjusting the illumination source or mask pattern for each pixel group and mask tile are repeated iteratively until a convergence of the lithographic metric, the modified illumination shape for a current iteration used as the initial illumination shape for a next iteration and the modified mask pattern for a current iteration used as the initial mask pattern for a next iteration.

4. A method according to claim 1, wherein the initial illumination shape and the initial mask pattern are determined through one or more of:

experimentation, photolithographic simulation, and a grid search.

5. A method according to claim 1, wherein the lithographic model comprises one or more of the following:

a calibrated resist model, a lumped parameter model (LPM), and, an aerial image model or an image-in-film model.

6. A method according to claim 1, wherein the illumination source is divided into pixel groups based on a symmetry of a pattern of the illumination source.

7. A method according to claim 1, wherein the state of a mask tile is one of the following:

one-transmission, one-transmission with a 0-degree phase shift, zero-transmission, and a partial transmission with a 180-degree phase shift.

8. A method according to claim 1, wherein the lithographic metric comprises one or more of:

a critical dimension uniformity of the lithography pattern, a process window, a dimension of the process window, MEEF, maximum NILS, maximum NILS in defocus, edge placement error, process variation bandwidth, worst deviation in a process corner, or a pattern fidelity metric.

9. A method according to claim 8, wherein the lithographic metric is user-defined.

10. A method according to claim 8, wherein the pattern fidelity metric accounts for assist feature printing, sidelobe printing, feature shape errors, or feature displacement errors.

11. A method according to claim 1, wherein the lithographic metric is calculated over an assumed budget of errors.

12. A method according to claim 1, wherein the errors include a mask error, a dose error and a focus error.

13. A method according to claim 1, wherein ranking pixel groups in the plurality of pixel groups and mask tiles in the plurality of mask tiles comprises:

determining, for each pixel group in the plurality of pixel groups and each mask tile in the plurality of mask tiles, a linear sensitivity value that indicates how an alteration in state of the each pixel group or the each mask tile from an initial state affects the lithographic metric;

ranking, based on the linear sensitivity values of the pixel groups and the mask tiles, the pixel groups and the mask tiles.

14. A method according to claim 13, wherein ranking, based on the linear sensitivity values of the pixel groups and the mask tiles, the pixel groups and the mask tiles comprises:

ranking a first pixel group or mask tile higher than a second pixel group or mask tile in response to determining that the linear sensitivity values of the first pixel group or mask tile and the second pixel group or mask tile indicate that an alteration in state of the first pixel group or mask tile results in a larger improvement to the lithographic metric than an alteration in state of the second pixel group or mask tile.

15. A method according to claim 2, wherein the step of calculating a lithographic metric as a result of an alteration in state is preceded by a step of adjusting the mask pattern of the mask by iteratively adjusting mask polygons of the mask pattern of the mask.

16. A method according to claim 2, further comprising:

for each pair of pixel groups of the illumination source, performing the steps of;

calculating the lithographic metric as a result of an alteration in state from a current state to a new state of each pixel group in the each pair of pixel groups;

based on a comparison between the lithographic metric and a current lithographic metric, the current lithographic metric calculated based on the current state of each pixel group of the each pair of pixel groups, determining whether to adjust the illumination source; and

in response to determining to adjust the illumination source, adjusting the illumination source by altering the current state of each pixel group in the each pair of pixel groups to the new state and updating the current lithographic metric to be the calculated lithographic metric.

17. A computer product having machine executable instructions, the instructions being executable by a machine to perform a method for optimizing an illumination source of a lithographic apparatus and a mask, the method comprising:

dividing the illumination source into a plurality of pixel groups, each pixel group including one or more illumination source points;

dividing the mask into a plurality of mask tiles;

selecting an initial illumination shape for the illumination source;

selecting an initial mask pattern for the mask;

selecting an initial configuration for the at least one lithographic process component;

selecting a lithographic model for photolithographic simulation;

ranking pixel groups in the plurality of pixel groups and mask tiles in the plurality of mask tiles;

for each pixel group in the plurality of pixel groups and each mask tile in the plurality of mask tiles, in order of ranking, performing the steps of;

calculating, based on a result of a photolithographic simulation using the lithographical model, a lithographic metric as a result of an alteration in state of the each pixel group or the each mask tile;

based on a result of the calculation, adjusting an illumination shape of the illumination source by altering a state of the each pixel group to create a modified illumination shape or adjusting a mask pattern of the mask by altering a state of the each mask tile to create a modified mask pattern.

18. A lithographic apparatus comprising:

an illumination system configured to condition a beam of radiation;

a substrate table configured to hold a substrate;

a projection system configured to project a beam of radiation patterned by a patterning device onto a surface of the substrate; and

a processor to perform a method for optimizing an illumination source of a lithographic apparatus and a mask, the method comprising;

dividing the illumination source into a plurality of pixel groups, each pixel group including one or more illumination source points;

dividing the mask into a plurality of mask tiles;

selecting an initial illumination shape for the illumination source;

selecting an initial mask pattern for the mask;

selecting an initial configuration for the at least one lithographic process component;

selecting a lithographic model for photolithographic simulation;

ranking pixel groups in the plurality of pixel groups and mask tiles in the plurality of mask tiles;

for each pixel group in the plurality of pixel groups and each mask tile in the plurality of mask tiles, in order of ranking, performing the steps of;

calculating, based on a result of a photolithographic simulation using the lithographical model, a lithographic metric as a result of an alteration in state of the each pixel group or the each mask tile;

based on a result of the calculation, adjusting an illumination shape of the illumination source by altering a state of the each pixel group to create a modified illumination shape or adjusting a mask pattern of the mask by altering a state of the each mask tile to create a modified mask pattern.

19. A method for configuring an illumination source of a lithographic apparatus, the method comprising:

determining, for each pixel group in the plurality of pixel groups, a linear sensitivity value that indicates how an alteration in state of the each pixel group from an initial state affects a lithographic response;

until the lithographic response converges, repeating the steps of;

for each pixel group in the plurality of pixel groups, calculate the lithographic response based on the linear sensitivity value of the each pixel group;

altering a state of a particular pixel group to an updated state, the calculated lithographic response for the particular pixel group indicating a greater amount of improvement over a current lithographic response than the calculated lithographic responses for pixel groups other than the particular pixel group, the current lithographic response calculated based on current states of the pixel groups; and

updating the current lithographic response based on the updated state of the particular pixel group.

20. A method according to claim 19, wherein:

the step of updating the current lithographic response is preceded by a step of adjusting at least one of a numerical aperture and a tilt of the lithographic apparatus; and

the step of updating the current lithographic response includes updating the current lithographic response based on at least one of;

an adjusted numerical aperture and an adjust tilt of the lithographic apparatus.