SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

• US 20100315751A1
• Filed: 08/05/2010
• Published: 12/16/2010
• Est. Priority Date: 12/16/2005
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: Suzuki, Hirokatsu, Fujiki, Atsushi, Nakazawa, Yoshito
• Granted Patent: US 8,441,065 B2
• Time in Patent Office: Days
• US Class Current: 361/93.8
• CPC Class Codes: H01L 21/823412 with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
• CPC Class Codes: H01L 21/82345 gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
• CPC Class Codes: H01L 21/823487 with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface with a current flow parallel to the substrate surface H01L21/823431
• CPC Class Codes: H01L 27/0248 for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/1087 characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
• CPC Class Codes: H01L 29/66659 with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
• CPC Class Codes: H01L 29/66666 Vertical transistors H01L29/66712, H01L29/66742 take precedence
• CPC Class Codes: H01L 29/66696 with a step of recessing the source electrode
• CPC Class Codes: H01L 29/66704 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7815 with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
• CPC Class Codes: H01L 29/7835 with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Abstract

A semiconductor device which combines reliability and the guarantee of electrical characteristics is provided. A power MOSFET and a protection circuit formed over the same semiconductor substrate are provided. The power MOSFET is a trench gate vertical type P-channel MOSFET and the conduction type of the gate electrode is assumed to be P-type. The protection circuit includes a planar gate horizontal type offset P-channel MOSFET and the conduction type of the gate electrode is assumed to be N-type. These gate electrode and gate electrode are formed in separate steps.

Claims

1. A semiconductor device for use in an automobile, including:

a semiconductor substrate;

a P-channel trench gate MOSFET having a gate electrode, a source and a drain, disposed over a main surface of the semiconductor substrate; and

a protection circuit coupled to the gate electrode of the p-channel trench gate MOSFET,

the protection circuit comprising a p-channel planar gate MOSFET disposed over the main surface of the semiconductor substrate,

wherein a conduction type of a gate electrode of the trench gate MOSFET is p-type,

a conduction type of a gate electrode of the planar gate MOSFET is n-type,

one of the source and the drain of the P-channel trench gate MOSFET is coupled to a battery in the automobile,

another one of the source and the drain of the P-channel trench gate MOSFET is coupled to a load in the automobile,

the load is coupled to a ground terminal in the automobile.

2. The semiconductor device according to claim 1,

wherein the planer gate MOSFET has an offset drain structure.

3. The semiconductor device according to claim 1,

wherein the protection circuit is a temperature detection overheat cutoff circuit.

4. The semiconductor device according to claim 1,

wherein the protection circuit is an over-current limit circuit.

5. The semiconductor device according to claim 1,

wherein the load is a lamp of the automobile, and

the P-channel trench gate MOSFET is used for switching on and off the lamp.

6. The semiconductor device according to claim 1,

wherein the P-channel trench gate MOSFET is a high side switch.