SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
First Claim
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1. A semiconductor device for use in an automobile, including:
- a semiconductor substrate;
a P-channel trench gate MOSFET having a gate electrode, a source and a drain, disposed over a main surface of the semiconductor substrate; and
a protection circuit coupled to the gate electrode of the p-channel trench gate MOSFET,the protection circuit comprising a p-channel planar gate MOSFET disposed over the main surface of the semiconductor substrate,wherein a conduction type of a gate electrode of the trench gate MOSFET is p-type,a conduction type of a gate electrode of the planar gate MOSFET is n-type,one of the source and the drain of the P-channel trench gate MOSFET is coupled to a battery in the automobile,another one of the source and the drain of the P-channel trench gate MOSFET is coupled to a load in the automobile,the load is coupled to a ground terminal in the automobile.
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Abstract
A semiconductor device which combines reliability and the guarantee of electrical characteristics is provided. A power MOSFET and a protection circuit formed over the same semiconductor substrate are provided. The power MOSFET is a trench gate vertical type P-channel MOSFET and the conduction type of the gate electrode is assumed to be P-type. The protection circuit includes a planar gate horizontal type offset P-channel MOSFET and the conduction type of the gate electrode is assumed to be N-type. These gate electrode and gate electrode are formed in separate steps.
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Citations
6 Claims
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1. A semiconductor device for use in an automobile, including:
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a semiconductor substrate; a P-channel trench gate MOSFET having a gate electrode, a source and a drain, disposed over a main surface of the semiconductor substrate; and a protection circuit coupled to the gate electrode of the p-channel trench gate MOSFET, the protection circuit comprising a p-channel planar gate MOSFET disposed over the main surface of the semiconductor substrate, wherein a conduction type of a gate electrode of the trench gate MOSFET is p-type, a conduction type of a gate electrode of the planar gate MOSFET is n-type, one of the source and the drain of the P-channel trench gate MOSFET is coupled to a battery in the automobile, another one of the source and the drain of the P-channel trench gate MOSFET is coupled to a load in the automobile, the load is coupled to a ground terminal in the automobile. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification