×

Methods Of Forming Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials

  • US 20100316793A1
  • Filed: 06/12/2009
  • Published: 12/16/2010
  • Est. Priority Date: 06/12/2009
  • Status: Active Grant
First Claim
Patent Images

1. A method of forming a capacitor, comprising:

  • depositing inner conductive metal capacitor electrode material over a substrate;

    forming a capacitor dielectric region outward of the inner conductive metal capacitor electrode material to a thickness no greater than 150 Angstroms, a dielectric constant k of at least 35, and leakage current no greater than 1×

    10

    7
    amps/cm2 at from −

    1.1V to +1.1V;

    the forming of the capacitor dielectric region comprising;

    depositing an amorphous ZrO2-comprising material to a thickness no greater than 35 Angstroms outward of the inner conductive metal capacitor electrode material;

    annealing the amorphous ZrO2-comprising material having thickness no greater than 35 Angstroms after its deposition to form crystalline ZrO2-comprising material having a thickness no greater than 35 Angstroms;

    after the annealing of the amorphous ZrO2-comprising material, depositing an Al2O3-comprising material outward of the crystalline ZrO2-comprising material, the Al2O3-comprising material having a thickness of from 2 Angstroms to 16 Angstroms;

    depositing an amorphous TiO2-comprising material to a thickness no greater than 50 Angstroms outward of the Al2O3-comprising material; and

    annealing the amorphous TiO2-comprising material having thickness no greater than 50 Angstroms in the presence of oxygen after its deposition to form crystalline TiO2-comprising material; and

    after the annealing of the amorphous TiO2-comprising material, depositing outer conductive metal capacitor electrode material outward of the crystalline TiO2-comprising material.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×