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METHOD FOR IMPROVING THE THERMAL STABILITY OF SILICIDE

  • US 20100317170A1
  • Filed: 08/20/2010
  • Published: 12/16/2010
  • Est. Priority Date: 08/17/2004
  • Status: Abandoned Application
First Claim
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1. A method for making a transistor, comprising:

  • providing a semiconductor substrate;

    forming a gate dielectric layer over said semiconductor substrate;

    forming a gate electrode layer over said gate dielectric layer;

    performing an ion implant on said gate electrode layer using N2+ gas; and

    etching said implanted gate electrode layer and said gate dielectric layer to form a gate stack having a gate electrode and a gate dielectric.

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