METHOD FOR IMPROVING THE THERMAL STABILITY OF SILICIDE
First Claim
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1. A method for making a transistor, comprising:
- providing a semiconductor substrate;
forming a gate dielectric layer over said semiconductor substrate;
forming a gate electrode layer over said gate dielectric layer;
performing an ion implant on said gate electrode layer using N2+ gas; and
etching said implanted gate electrode layer and said gate dielectric layer to form a gate stack having a gate electrode and a gate dielectric.
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Abstract
An embodiment of the invention is a method of making a transistor by performing an ion implant on a gate electrode layer 110. The method may include forming an interface layer 200 over the semiconductor substrate 20 and performing an anneal to create a silicide 190 on the top surface of the gate electrode 110.
20 Citations
15 Claims
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1. A method for making a transistor, comprising:
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providing a semiconductor substrate; forming a gate dielectric layer over said semiconductor substrate; forming a gate electrode layer over said gate dielectric layer; performing an ion implant on said gate electrode layer using N2+ gas; and etching said implanted gate electrode layer and said gate dielectric layer to form a gate stack having a gate electrode and a gate dielectric. - View Dependent Claims (2, 3, 4, 5)
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6. A method for making a transistor, comprising:
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providing a semiconductor substrate; forming a gate dielectric layer over said semiconductor substrate; forming a gate electrode layer over said gate dielectric layer; performing an ion implant on said gate electrode layer using F+ gas; and etching said implanted gate electrode layer and said gate dielectric layer to form a gate stack having a gate electrode and a gate dielectric. - View Dependent Claims (7, 8, 9, 10)
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11. A method for making a transistor, comprising:
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providing a semiconductor substrate; forming a gate dielectric layer over said semiconductor substrate; forming a gate electrode layer over said gate dielectric layer; performing an ion implant on said gate electrode layer using Sb+ gas; and etching said implanted gate electrode layer and said gate dielectric layer to form a gate stack having a gate electrode and a gate dielectric. - View Dependent Claims (12, 13, 14, 15)
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Specification