METHOD AND APPARATUS FOR ETCHING A STRUCTURE IN A PLASMA CHAMBER
First Claim
1. A method for performing plasma etching on a structure, comprising:
- establishing a plasma in a gaseous atmosphere that contacts a first electrode;
monitoring plasma density and adjusting an amount of RF power supplied to the first electrode to achieve a given plasma density; and
monitoring ion energy of plasma species impinging on a semiconductor structure associated with a second electrode and, in response thereto, adjusting an amount of RF power supplied to the second electrode to achieve a given ion energy.
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Abstract
A plasma processing apparatus includes a plasma reaction chamber in which a plasma is generated for processing. First and second electrodes are located in the chamber for generating the plasma. First and second RF power sources provide RF power to the first and second electrodes, respectively. The apparatus also includes first and second impedance matching circuits through which the RF power is respectively provided from the first and second RF power supplies to the first and second electrodes. A first plasma controller monitors plasma density and, in response thereto, adjusts the RF power supplied by the first RF power source to the first electrode to achieve a given plasma density. A second plasma controller monitors the ion energy of plasma species impinging on a semiconductor structure associated with the second electrode and, in response thereto, adjusts the RF power supplied by the second RF power source to the second electrode to achieve a given ion energy.
20 Citations
7 Claims
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1. A method for performing plasma etching on a structure, comprising:
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establishing a plasma in a gaseous atmosphere that contacts a first electrode; monitoring plasma density and adjusting an amount of RF power supplied to the first electrode to achieve a given plasma density; and monitoring ion energy of plasma species impinging on a semiconductor structure associated with a second electrode and, in response thereto, adjusting an amount of RF power supplied to the second electrode to achieve a given ion energy. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification