PROCESS FOR PRODUCING SILICON CARBIDE CRYSTALS HAVING INCREASED MINORITY CARRIER LIFETIMES
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Abstract
A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.
15 Citations
78 Claims
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1-17. -17. (canceled)
- 17. A silicon carbide single crystal having a minority carrier lifetime of at least about 1 microsecond.
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20-60. -60. (canceled)
- 61. A silicon carbide single crystal wafer having a minority carrier lifetime of at least about 1 microsecond.
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67. A semiconductor device comprising:
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a silicon carbide single crystal substrate having a minority carrier lifetime of at least about 1 microsecond; and at least one epitaxial layer. - View Dependent Claims (68, 69, 70, 71, 72, 73, 74, 75)
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76. A diode comprising:
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a p type layer; an n type layer; and a silicon carbide intrinsic layer sandwiched in between the p type layer and the n type layer wherein the minority carrier lifetime of the intrinsic layer is at least about 1 microsecond. - View Dependent Claims (77, 78)
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Specification