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Method for Forming MEMS Devices Having Low Contact Resistance and Devices Obtained Thereof

  • US 20100320606A1
  • Filed: 06/17/2010
  • Published: 12/23/2010
  • Est. Priority Date: 06/18/2009
  • Status: Active Grant
First Claim
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1. A MEMS device comprising a silicon-germanium (SiGe) layer formed over a dielectric stack which is formed over a an another layer, the dielectric layer stack comprising an opening exposing the conductive layer, whereby an interface layer separates the SiGe layer from the dielectric layer stack at least in the opening and from the exposed another layer in the opening.

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