INTERCONNECTION SUBSTRATE, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE

• US 20100320618A1
• Filed: 08/24/2010
• Published: 12/23/2010
• Est. Priority Date: 03/24/2008
• Status: Active Grant

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Nakata, Yoshihiro, Kobayashi, Yasushi, Ozaki, Shirou, Imada, Tadahiro
• Granted Patent: US 8,390,099 B2
• Time in Patent Office: Days
• US Class Current: 257/774
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/02348 treatment by exposure to UV light
• CPC Class Codes: H01L 21/3121 Layers comprising organo-silicon compounds
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76825 by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc. plasma treatment H01L21/76826
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 428/31663 As siloxane, silicone or silane

Abstract

An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below:

Si—C_XH_Y—Si  General Formula (1)

where X is equal to 2Y and is an integer of 1 or more.

Claims

1. An interconnection substrate comprising:

a first insulating film made of a silicon compound,

an adhesion enhancing layer formed on the first insulating film, and

a second insulting film made of a silicon compound and formed on the adhesion enhancing layer,

wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below;

Si—

C_XH_Y—

Si 

 

General Formula (1)

where X is equal to 2Y and is an integer of 1 or more.

2. The interconnection substrate according to claim 1, wherein a material forming the adhesion enhancing layer contains organoalkoxysilane reactive with an active energy beam.

3. The interconnection substrate according to claim 2, wherein the active energy beam is at least one selected from the group consisting of infrared ray, visible light, ultraviolet ray, electron beam and X-ray.

4. The interconnection substrate according to claim 1, wherein a material forming the adhesion enhancing layer contains a basic additive and organoalkoxysilane.

5. The interconnection substrate according to claim 1, wherein the adhesion enhancing layer contains the component having a structure represented by General Formula (1) in an amount more than contained in the second insulating film.

6. A semiconductor device comprising,

a multilayer interconnection,

wherein the multilayer interconnection comprises a first insulating film made of a silicon compound, an adhesion enhancing layer provided on the first insulating film, and a second insulting film made of a silicon compound and provided on the adhesion enhancing layer, and

wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below:

Si—

C_XH_Y—

Si 

 

General Formula (1)

where X is equal to 2Y and is an integer of 1 or more.

7. The semiconductor device according to claim 6, wherein a material forming the adhesion enhancing layer contains organoalkoxysilane reactive with an active energy beam.

8. The semiconductor device according to claim 7, wherein the active energy beam is at least one selected from the group consisting of infrared ray, visible light, ultraviolet ray, electron beam and X-ray.

9. The semiconductor device according to claim 6, wherein a material forming the adhesion enhancing layer contains a basic additive and organoalkoxysilane.

10. The semiconductor device according to claim 6, wherein the adhesion enhancing layer contains the component having a structure represented by General Formula (1) in an amount more than contained in the second insulating film.

11. A method for producing a semiconductor device, comprising:

forming a multilayer interconnection,

wherein the forming a multilayer interconnection comprises;

forming a first insulating film made of a silicone compound;

forming, on the first insulating film, an adhesion enhancing layer containing a material reactive with an active energy beam;

forming, on the adhesion enhancing layer, a second insulating film made of a silicon compound through which the active energy ray can pass, so as to form a laminate of the first insulating film, the adhesion enhancing layer and the second insulating film; and

irradiating the active energy beam to the laminate from the side of the second insulating film so that a component having a structure represented by General Formula (1) described below is formed between the first insulating film and the second insulating film;

Si—

C_XH_Y—

Si 

 

General Formula (1)

where X is equal to 2Y and is an integer of 1 or more.

12. The method according to claim 11, wherein the active energy beam is at least one selected from the group consisting of infrared ray, visible light, ultraviolet ray, electron beam and X-ray.

13. The method according to claim 11, wherein a material forming the adhesion enhancing layer contains organoalkoxysilane reactive with an active energy beam.

14. The method according to claim 11, wherein a material forming the adhesion enhancing layer contains a basic additive and organoalkoxysilane.

15. The method according to claim 11, wherein the adhesion enhancing layer contains the component having a structure represented by General Formula (1) in an amount more than contained in the second insulating film.