VERTICAL CAVITY SURFACE EMITTING LASER

• US 20100322277A1
• Filed: 06/17/2010
• Published: 12/23/2010
• Est. Priority Date: 06/18/2009
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Uchida, Takeshi
• Granted Patent: US 8,340,149 B2
• Time in Patent Office: Days
• US Class Current: 372/45.01
• CPC Class Codes: H01S 2301/166 Single transverse or lateral mode
• CPC Class Codes: H01S 5/18361 Structure of the reflectors, e.g. hybrid mirrors
• CPC Class Codes: H01S 5/18386 Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface

Abstract

A vertical cavity surface emitting laser includes, a lower DBR layer; an upper DBR layer; an active layer existing between the lower DBR layer and the upper DBR layer; and a laser emitting region provided on a surface layer of the upper DBR layer, in which the upper DBR layer includes a doped first semiconductor multilayer film layer and an undoped second semiconductor multilayer film layer; an electrode provided on the upper DBR layer is formed in a region which is on an upper part of the first semiconductor multilayer film layer and is surrounded by the second semiconductor multilayer film layer; the laser emitting region is formed on a surface layer of the second semiconductor multilayer film layer; and the surface layer of the first semiconductor multilayer film layer is formed by a contact layer and the second semiconductor multilayer film layer is stacked on the contact layer.

Claims

1. A vertical cavity surface emitting laser, comprising:

a lower DBR layer;

an upper DBR layer;

an active layer existing between the lower DBR layer and the upper DBR layer; and

a laser emitting region provided on a surface layer of the upper DBR layer, wherein

the upper DBR layer includes a doped first semiconductor multilayer film layer and an undoped second semiconductor multilayer film layer;

an electrode provided on the upper DBR layer is formed in a region which is on an upper part of the first semiconductor multilayer film layer and is surrounded by the second semiconductor multilayer film layer;

the laser emitting region is formed on a surface layer of the second semiconductor multilayer film layer; and

the surface layer of the first semiconductor multilayer film layer is formed by a contact layer and the second semiconductor multilayer film layer is stacked on the contact layer.

2. The vertical cavity surface emitting laser according to claim 1, wherein the first semiconductor multilayer film layer and the second semiconductor multilayer film layer are formed in which a crystal lattice is continued from the first to second layers.

3. The vertical cavity surface emitting laser according to claim 1, wherein the contact layer is doped with a higher concentration of dopant than that of the other semiconductor multilayer film layers except the contact layer in the first semiconductor multilayer film layer.

4. The vertical cavity surface emitting laser according to claim 1, wherein the surface layer of the second semiconductor multilayer film layer has a laser emitting region in the central part in an in-plane direction of the surface layer, and the central part of the laser emitting region is formed by etching.

5. The vertical cavity surface emitting laser according to claim 1, wherein the surface layer of the second semiconductor multilayer film layer has a laser emitting region in the central part in an in-plane direction of the surface layer, and the laser emitting region is formed in a ring shape by etching, in which the central part is not removed.