ATMOSPHERIC PRESSURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PROCESS

• US 20100323127A1
• Filed: 07/15/2008
• Published: 12/23/2010
• Est. Priority Date: 07/30/2007
• Status: Abandoned Application

• Current Assignee: Christina Ann Rhoton, John Matthew Warakomski
• Original Assignee: Christina Ann Rhoton, John Matthew Warakomski
• Inventors: Rhoton, Christina Ann, Warakomski, John Matthew
• Application Number:
  US12/666,307
• Publication Number:
  US 20100323127A1
• Time in Patent Office: Days
• US Class Current: 427/579
• CPC Class Codes: B05D 1/60 Deposition of organic layers from vapour phase vapour phase deposition in general C23C14/00, C23C16/00
• CPC Class Codes: B05D 1/62 Plasma-deposition of organic layers plasma deposition in general C23C14/00, C23C16/00
• CPC Class Codes: B05D 5/00 Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
• CPC Class Codes: B05D 5/08 to obtain an anti-friction or anti-adhesive surface rendering particulate materials free-flowing in general, e.g. making them hydrophobic B01J2/30
• CPC Class Codes: B05D 7/04 to surfaces of films or sheets producing layered products by applying coatings of pasty or pulverulent plastics B29C41/00
• CPC Class Codes: C23C 16/401 containing silicon

Abstract

A process for depositing a film coating on an exposed surface of a substrate by the steps of: (a) providing a substrate having at least one exposed surface; and (b) flowing a gaseous mixture into an atmospheric pressure plasma that is in contact with at least one exposed surface of said substrate to form a plasma enhanced chemical vapor deposition coating on the substrate, the gaseous mixture containing an oxidizing gas and a precursor selected from the group consisting of: a vinylalkoxysilane, a vinylalkylsilane, a vinylalkylalkoxysilane, an allyalkoxysilane, an allylalkylsilane, an allylalkylalkoxysilane, an alkenylalkoxysilane, an alkenylalkylsilane, and an alkenylalkylalkoxysilane, the oxygen content of the gaseous mixture being greater than ten percent by volume.

Claims

1. A process for depositing a film coating on an exposed surface of a substrate, the process comprising the steps of:

(a) providing a substrate having at least one exposed surface; and

(b) flowing a gaseous mixture into an atmospheric pressure plasma that is in contact with at least one exposed surface of said substrate to form a plasma enhanced chemical vapor deposition coating on the substrate, the gaseous mixture comprising an oxidizing gas and a precursor selected from the group consisting of;

a vinylalkoxysilane, a vinylalkylsilane, a vinylalkylalkoxysilane, an allyalkoxysilane, an allylalkylsilane, an allylalkylalkoxysilane, an alkenylalkoxysilane, an alkenlyalkylsilane, an alkenylalkylalkoxysilane and mixtures thereof, the oxygen content of the gaseous mixture being greater than the equivalent of fifteen percent molecular oxygen gas by volume.

2. The process of claim 1, wherein the gaseous mixture comprises a precursor selected from the group consisting of:

vinyl triethoxysilane, vinyltripropoxysilane, vinyl dimethoxyethoxysilane, vinyldiethoxymethoxysilane, vinyldimethylsilane, vinyldimethylsilane, vinylmethyldimethoxysilane, vinylmethyldiethoxysilane, vinyldimethylethoxysilane, allyltrimethoxysilane, 1,3-divinyltetramethyldisiloxane, 1,3-divinyltetraethoxydisiloxane, divinyldimethylsilane, and trivinylmethoxysilane.

3. The process of claim 1, wherein the precursor consists essentially of a vinylalkoxysilane, vinylalkylsilane, vinylalkylalkoxysilane, allyalkoxysilane, allylalkylsilane, allylalkylalkoxysilane, alkenylalkoxysilane, alkenlyalkylsilane, alkenylalkylalkoxysilane, or a mixture thereof.

4. The process of claim 1, wherein the precursor consists essentially of vinyl triethoxysilane, vinyltripropoxysilane, vinyl dimethoxyethoxysilane, vinyldiethoxymethoxysilane, vinyldimethylsilane, vinyldimethylsilane, vinylmethyldimethoxysilane, vinylmethyldiethoxysilane, vinyldimethylethoxysilane, allyltrimethoxysilane, 1,3-divinyltetramethyldisiloxane, 1,3-divinyltetraethoxydisiloxane, divinyldimethylsilane, trivinylmethoxysilane, or a mixture thereof.

5. The process of claim 1, wherein the precursor consists essentially of vinyl trimethoxysilane.

6. The process of claim 1, wherein the gaseous mixture comprises a mixture of vinyl trimethoxysilane and tetramethyldisiloxane.

7. The process of claim 1, the process further comprising the step of producing the substrate by a substrate production process selected from the group consisting of:

injection molding, vacuum molding, compression molding, and extrusion.

8. The process of claim 7, wherein the substrate production process is extrusion.

9. The process of claim 1, wherein the oxidizing gas is selected from the group consisting of air, oxygen, ozone, N₂O, NO, NO₂, N₂O₃, N₂O₄ and mixtures thereof.

10. The process of claim 1, wherein the plasma enhanced chemical vapor deposition coating is characterized by an abrasion resistance when subjected to a Taber test using CS-10F wheels and 500 gram load following ASTM D3489-85(90) that exhibits increase in haze of less than about 5% after 500 cycles.

11. The process of claim 1, wherein the plasma enhanced chemical vapor deposition coating is deposited at a rate greater than about 2 micrometers per minute.

12. The process of claim 1, wherein the plasma enhanced chemical vapor deposition coating is characterized by having a thickness greater than about one micrometer.

13. The process of claim 1, wherein the oxygen content of the gaseous mixture is greater than the equivalent of twenty-five percent molecular oxygen gas by volume.

14. The process of claim 1, wherein the precursor consists essentially of the vinylalkoxysilane, vinylalkylsilane, vinylalkylalkoxysilane, allyalkoxysilane, allylalkylsilane, allylalkylalkoxysilane, alkenylalkoxysilane, alkenlyalkylsilane, or alkenylalkylalkoxysilane.