METHOD OF THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE

• US 20100323532A1
• Filed: 08/12/2010
• Published: 12/23/2010
• Est. Priority Date: 03/08/2006
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Hunter, Aaron Muir, Carey, Paul, Schaffer, William, Yam, Mark, Thomas, Timothy N., Moffatt, Stephen, Mayur, Abhilash J., Jennings, Dean
• Granted Patent: US 10,141,191 B2
• Time in Patent Office: Days
• US Class Current: 438/795
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/823418 with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/6659 with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
• CPC Class Codes: H01L 29/66659 with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Abstract

The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Claims

1. A method of thermally processing a substrate, comprising:

positioning the substrate on a substrate support comprising a heating element and increasing the temperature of the substrate;

delivering a first energy from a first energy source to the substrate; and

delivering a second energy from a second energy source to the substrate, wherein the first energy or the second energy is annealing energy and the annealing energy is polarized laser energy.

2. The method of claim 1, wherein the first energy source is a laser and the second energy source is a laser.

3. The method of claim 2, wherein the first energy elevates the temperature of the substrate surface to a first temperature, and the second energy brings the temperature of the substrate surface to a second temperature that completes the thermal processing.

4. The method of claim 1, wherein the second energy source comprises a series of lasers.

5. The method of claim 1, wherein an amount of the second energy is less than an amount of the first energy.

6. The method of claim 1, wherein the first energy and the second energy are delivered to a first region of the substrate, the first region having an area less than a surface of the substrate.

7. The method of claim 1, wherein the first energy comprises a pulse of energy from the first energy source, and the second energy comprises a pulse of energy from the second energy source.

8. The method of claim 1, wherein the first energy and the second energy individually do not cause a portion of the substrate to melt.

9. A method of thermally processing a substrate, comprising:

positioning the substrate on a substrate support comprising a heating element and increasing the temperature of the substrate;

delivering a pulse of first energy from a first energy source to the substrate; and

delivering a pulse of second energy from a second energy source to the substrate, wherein the first energy or the second energy is annealing energy and the annealing energy is polarized laser energy.

10. The method of claim 9, wherein the first energy and the second energy individually could not cause a portion of the substrate to melt.

11. The method of claim 10, wherein the first energy and the second energy combined cause a portion of the substrate to melt.

12. The method of claim 10, wherein the shape of the pulse of the first energy is varied as a function of time.

13. The method of claim 12, where the shape of the pulse of the second energy is varied as a function of time.

14. The method of claim 13, wherein the first energy source and the second energy source are lasers.

15. The method of claim 9, wherein only the second energy is polarized.

16. A method of thermally processing a substrate, comprising:

delivering a first energy from a first energy source to the substrate; and

delivering a second energy from a second energy source to the substrate, wherein at least one of the first energy and the second energy are polarized laser energy, and wherein the first energy and the second energy individually could not cause a portion of the substrate to melt.

17. The method of claim 16, wherein the first energy and the second energy combined cause a portion of the substrate to melt.

18. The method of claim 17, wherein both the first energy and the second energy are polarized laser energy.