METHOD FOR PROCESSING A SUBSTRATE AND APPARATUS FOR PERFORMING THE SAME

• US 20100326476A1
• Filed: 06/28/2010
• Published: 12/30/2010
• Est. Priority Date: 06/30/2009
• Status: Abandoned Application

• Current Assignee: Semes Co., Ltd (Samsung Electronics Co. Ltd.)
• Original Assignee: Semes Co., Ltd (Samsung Electronics Co. Ltd.)
• Inventors: Rho, Eun-Su, Bae, Jeong-Yong
• Application Number:
  US12/824,364
• Publication Number:
  US 20100326476A1
• Time in Patent Office: Days
• US Class Current: 134/26
• CPC Class Codes: G03F 7/422 using liquids only G03F7/421 takes precedence
• CPC Class Codes: G03F 7/423 containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
• CPC Class Codes: H01L 21/6708 using mainly spraying means, e.g. nozzles

Abstract

An apparatus for processing substrate includes a spin chuck, a first nozzle and a second nozzle. The spin chuck fixes and spins the substrate on which a photoresist layer is formed. The first nozzle is disposed over the spin chuck and provides a treatment liquid on the substrate so as to remove the photoresist layer. The second nozzle is disposed over the spin chuck and provides a mist including deionized water or hydrogen peroxide on the substrate to make contact with the treatment liquid so as to increase a temperature of the treatment liquid. Therefore, efficiency of removing the photoresist layer may be improved.

Claims

1. A method for processing a substrate, the method comprising:

arranging the substrate on which a photoresist layer is formed;

providing a treatment liquid for removing the photoresist layer on the substrate; and

providing a mist including deionized water or hydrogen peroxide on the substrate to make contact with the treatment liquid so as to increase a temperature of the treatment liquid.

2. The method of claim 1, wherein the mist is formed by ultrasonic waves.

3. The method of claim 1, wherein a temperature of the mist is between about 10°

C. and about 99.9°

C.

4. The method of claim 1, wherein a particle size of the mist is between about 1 nm and about 100000 nm.

5. The method of claim 1, wherein the mist is provided on the substrate using a carrier gas.

6. The method of claim 1, wherein the treatment liquid and the mist are injected at the same time.

7. The method of claim 1, wherein the treatment liquid and the mist make contact with each other before provided on the substrate.

8. The method of claim 1, wherein the treatment liquid and the mist make contact with each other on the substrate.

9. The method of claim 1, wherein the substrate spins, and the mist is provided in front of a position of the substrate at which the treatment liquid is provided.

10. The method of claim 1, wherein the treatment liquid includes one of SPM (Sulfuric Acid/Peroxide), SOM (Sulfuric Acid/Ozone), SC-1 (NH4OH/Peroxide/Water), SC-2 (HCl/Peroxide/Water) and BOE (Buffered Oxide Etch:

HF/NH4F).

11. An apparatus for processing a substrate, the apparatus comprising:

a spin chuck fixing and spinning the substrate on which a photoresist layer is formed;

a first nozzle disposed over the spin chuck and providing a treatment liquid on the substrate so as to remove the photoresist layer; and

a second nozzle disposed over the spin chuck and providing a mist including deionized water or hydrogen peroxide on the substrate to make contact with the treatment liquid so as to increase a temperature of the treatment liquid.

12. The apparatus of claim 11, wherein a number of the second nozzle is plural, and the second nozzles are disposed around the first nozzle.

13. The apparatus of claim 11, wherein the second nozzle is disposed at a side of the first nozzle.

14. The apparatus of claim 11, further comprising:

a mist generation part connected with the second nozzle, and generating the mist using a ultrasonic vibration so as to provide the mist to the second nozzle.

15. The apparatus of claim 14, further comprising:

a carrier gas providing part connected with the mist generation part, and providing a carrier gas carrying the mist to the second nozzle.

16. The apparatus of claim 11, wherein a temperature of the mist is between about 10°

C. and about 99.9°

C.

17. The apparatus of claim 11, wherein a particle size of the mist is between about 1 nm and about 100000 nm.

18. The apparatus of claim 11, wherein the treatment liquid is one of SPM, SOM, SC-1, SC-2 and BOE.