Avalanche Photodiode

• US 20100327387A1
• Filed: 06/26/2009
• Published: 12/30/2010
• Est. Priority Date: 06/26/2009
• Status: Abandoned Application

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Raytheon Company (Rtx Corporation)
• Inventors: Kasai, Ichiro, Wehner, Justin G. A.
• Application Number:
  US12/492,903
• Publication Number:
  US 20100327387A1
• Time in Patent Office: Days
• US Class Current: 257/438
• CPC Class Codes: H01L 31/107 the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Abstract

A photodiode may include a first region comprising substantially intrinsic semiconductor material, the region having a first side and a second side opposite to the first side. The photodiode may also include a second region comprising highly-doped p-type semiconductor material formed proximate to the first side of the first region. The photodiode may additionally include a third region comprising highly-doped n-type semiconductor material formed proximate to the second side of the first region. The photodiode may further include a fourth region comprising one of: (i) highly-doped p-type semiconductor formed between the first region and the third region, or (ii) highly-doped n-type semiconductor formed between the first region and the second region.

Claims

1. A photodiode comprising:

a first region comprising substantially intrinsic semiconductor material, the region having a first side and a second side opposite to the first side;

a second region comprising highly-doped p-type semiconductor material formed proximate to the first side of the first region;

a third region comprising highly-doped n-type semiconductor material formed proximate to the second side of the first region; and

a fourth region comprising one of;

(i) highly-doped p-type semiconductor formed between the first region and the third region, or (ii) highly-doped n-type semiconductor formed between the first region and the second region.

2. The photodiode of claim 1, wherein the first region, the second region, the third region, and the fourth region are formed on the same semiconductor substrate.

3. The photodiode of claim 1, wherein at least one of the second region and the fourth region is formed by one of:

(i) implantation of acceptor atoms into the semiconductor substrate and (ii) acceptor-doped epitaxial growth.

4. The photodiode of claim 1, wherein at least one of the third region and the fourth region is formed by one of:

(i) implantation of donor atoms into the semiconductor substrate and (ii) donor-doped epitaxial growth.

5. The photodiode of claim 1, wherein:

the fourth region comprises highly-doped p-type semiconductor formed between the first region and the third region; and

the first region comprises lightly-doped p-type semiconductor material.

6. The photodiode of claim 1, wherein:

the fourth region comprises highly-doped n-type semiconductor formed between the first region and the second region; and

the first region comprises lightly-doped n-type semiconductor material.

7. The photodiode of claim 1, wherein one of the second region and the third region defines a pixel area of the photodiode.

8. A system for photodetection comprising:

at least one photodiode operable to generate an electric signal in proportion to an intensity of light incident on the at least one photodiode, the at least one photodiode having;

a first region comprising substantially intrinsic semiconductor material, the region having a first side and a second side opposite to the first side;

a second region comprising highly-doped p-type semiconductor material formed proximate to the first side of the first region;

a third region comprising highly-doped n-type semiconductor material formed proximate to the second side of the first region; and

a fourth region comprising one of;

(i) highly-doped p-type semiconductor formed between the first region and the third region, or (ii) highly-doped n-type semiconductor formed between the first region and the second region; and

a processing unit communicatively coupled to the at least one photodiode.

9. The system of claim 8, wherein the electric signal is one of a voltage, a current and an electric charge.

10. The system of claim 8, comprising a focal plane array including the at least one photodiode.

11. The system of claim 8, wherein the first region, the second region, the third region, and the fourth region are formed on the same semiconductor substrate.

12. The system of claim 8, wherein at least one of the second region and the fourth region is formed by one of:

(i) implantation of acceptor atoms into the semiconductor substrate and (ii) acceptor-doped epitaxial growth.

13. The system of claim 8, wherein at least one of the third region and the fourth region is formed by one of:

(i) implantation of donor atoms into the semiconductor substrate and (ii) donor-doped epitaxial growth.

14. The system of claim 8, wherein:

the fourth region comprises highly-doped p-type semiconductor formed between the first region and the third region; and

the first region comprises lightly-doped p-type semiconductor material.

15. The system of claim 8, wherein:

the fourth region comprises highly-doped n-type semiconductor formed between the first region and the second region; and

the first region comprises lightly-doped n-type semiconductor material.

16. The system of claim 8, wherein one of the second region and the third region defines a pixel area of the photodiode.

17. The system of claim 8, wherein the at least one photodiode includes a plurality of photodiodes in which the first region and fourth regions are common to the plurality of photodiodes and one of the second region and the third region is common to the plurality of photodiodes.

18. -23. (canceled)