Producing a Marker Pattern and Measurement of an Exposure-Related Property of an Exposure Apparatus

• US 20100328636A1
• Filed: 06/17/2010
• Published: 12/30/2010
• Est. Priority Date: 06/25/2009
• Status: Abandoned Application

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Van Rooy, Michel Franciscus Johannes, Hinnen, Paul Christiaan, Leewis, Christian Marinus, Van Der Heijden, Eddy Cornelis Antonius, Quaedackers, Johannes Anna
• Application Number:
  US12/817,315
• Publication Number:
  US 20100328636A1
• Time in Patent Office: Days
• US Class Current: 355/53
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
• CPC Class Codes: G03F 7/70641 Focus
• CPC Class Codes: G03F 7/70683 Mark designs

Abstract

In order to determine whether an exposure apparatus is projecting patterns correctly, a marker pattern is used on a mask for printing a specific marker structure onto a substrate. This marker is then measured by an inspection apparatus to determine whether there are errors in exposure-related properties such as focus and dose. The projection of the marker pattern is modified so as to accentuate the production of side lobe-induced features of the marker structure relative to the production of side lobe-inducted features of the product structure. The form of the marker structure is more responsive to exposure variation than the form of the product structure to exposure variation. The marker pattern includes both primary features and secondary features that augment the side lobe arising from the primary feature to print side lobe-induced features on either side of a primary marker structure. Alternatively, the marker pattern is modified by having a different attenuation factor with respect to the product pattern. Alternatively, the marker pattern is modified by providing a marker dose different from the product dose.

Claims

1. A method of measuring an exposure-related property of an exposure apparatus used for producing a product structure on a substrate by projecting a product pattern from a patterning device onto the substrate, the method comprising:

producing a marker structure on a substrate using the exposure apparatus that is configured to be measured by projecting a marker pattern from a patterning device onto the substrate with a marker dose of radiation; and

measuring a property of the marker structure to determine the exposure-related property of the exposure apparatus,

wherein, for the production of the marker structure, the projecting the marker pattern is modified so as to accentuate the production of side lobe-induced features of the marker structure relative to production of side lobe-induced features of the product structure by the projecting of the product pattern.

2. The method of claim 1, wherein the projecting the marker pattern is modified by providing marker pattern that comprises:

a first marker pattern feature configured to produce a marker structure feature on the substrate; and

a second marker pattern feature configured to augment a marker side lobe arising from the first marker pattern feature to produce a side lobe-induced feature on the substrate beside the marker structure feature.

3. The method of claim 2, wherein the first marker pattern feature comprises a first bar and the second marker pattern feature comprises a pair of second bars arranged on the patterning device on either side of and parallel to the first bar.

4. The method of claim 1, wherein the projecting the marker pattern is modified by providing the patterning device with a marker attenuating phase shifter having a different attenuation factor with respect to a product attenuating phase shifter in the patterning device used to produce the product structure.

13. The method of claim 1, wherein the projecting the marker pattern is modified by providing the marker dose to be different from a product dose used in projecting the product pattern for the production of the product structure.

14. The method of claim 1, wherein the exposure-related property of the exposure apparatus being measured comprises a focus offset of an exposure radiation beam used in projecting the marker pattern.

15. The method of any of claim 1, wherein the exposure-related property of the exposure apparatus being measured comprises a dose offset of an exposure radiation beam used in projecting the marker pattern.

5. A patterning device for use in an exposure apparatus, the patterning device including a marker pattern for producing a marker structure on a substrate using the exposure apparatus by projecting the marker pattern from the patterning device onto the substrate, the marker pattern comprising:

a first marker pattern feature configured to produce a marker structure feature on the substrate; and

a second marker pattern feature configured to augment a marker side lobe arising from the first marker pattern feature to produce a side lobe-induced feature on the substrate beside the marker structure feature.

6. The patterning device of claim 5, wherein the first marker pattern feature comprises a first bar and the second marker pattern feature comprises a pair of second bars arranged on the patterning device on either side of and parallel to the first bar.

7. The patterning device of claim 5, wherein the marker pattern comprises an array in which the first and second marker pattern features are repeated.

8. A patterning device for use in an exposure apparatus, the patterning device comprising:

a marker pattern for producing a marker structure on a substrate using the exposure apparatus by projecting the marker pattern from the patterning device onto the substrate, the marker pattern comprising a marker attenuating phase shifter; and

a product pattern configured to produce a product structure on a substrate using the exposure apparatus by projecting the product pattern from the patterning device onto the substrate, the product pattern comprising a product attenuating phase shifter,

wherein the marker attenuating phase shifter has a different attenuation factor with respect to the product attenuating phase shifter, the different attenuation factor selected so as to accentuate the production of side lobe-induced features of the marker structure relative to production of side lobe-induced features of the product structure by the projecting of the product pattern.

9. The patterning device according to claim 8, wherein the marker attenuating phase shifter comprises a sub-resolution opaque feature arranged with a phase shift material to control the attenuation factor.

10. -12. (canceled)

16. -18. (canceled)

19. An exposure apparatus for producing a product structure and a marker structure on a substrate, comprising:

a projection device configured to project a product pattern from a patterning device onto the substrate with a product dose of radiation for production of the product structure, and to project a marker pattern from a patterning device onto the substrate with a marker dose of radiation for production of the marker structure,

wherein the exposure apparatus provides a marker dose different from the product dose, the different dose factor selected so as to accentuate the production of side lobe-induced features of the marker structure by the projection of the market pattern relative to production of side lobe-induced features of the product structure by the projection of the product pattern