SEMICONDUCTOR DEVICE

• US 20100328916A1
• Filed: 06/17/2010
• Published: 12/30/2010
• Est. Priority Date: 06/29/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Shishido, Hideaki, Hirose, Atsushi
• Granted Patent: US 8,836,034 B2
• Time in Patent Office: Days
• US Class Current: 361/783
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 23/62 Protection against overvoltage, e.g. fuses, shunts
• CPC Class Codes: H01L 27/0255 using diodes as protective elements
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14616 characterised by the channel of the transistor, e.g. channel having a doping gradient
• CPC Class Codes: H01L 27/14692 Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A protection circuit used for a semiconductor device is made to effectively function and the semiconductor device is prevented from being damaged by a surge. A semiconductor device includes a terminal electrode, a protection circuit, an integrated circuit, and a wiring electrically connecting the terminal electrode, the protection circuit, and the integrated circuit. The protection circuit is provided between the terminal electrode and the integrated circuit. The terminal electrode, the protection circuit, and the integrated circuit are connected to one another without causing the wiring to branch. It is possible to reduce the damage to the semiconductor device caused by electrostatic discharge. It is also possible to reduce faults in the semiconductor device.

Claims

1. A semiconductor device comprising over a substrate:

a terminal electrode;

a protection circuit;

an integrated circuit; and

a wiring electrically connecting the terminal electrode, the protection circuit, and the integrated circuit,

wherein the protection circuit s provided between the terminal electrode and the integrated circuit, and

wherein the terminal electrode, the protection circuit, and the integrated circuit are connected to one another without causing the wiring to branch.

2. The semiconductor device according to claim 1, wherein power supply voltage is configured to be applied to the terminal electrode.

3. The semiconductor device according to claim 1, wherein the protection circuit includes a diode.

4. The semiconductor device according to claim 1, wherein the protection circuit includes a semiconductor film.

5. The semiconductor device according to claim 1, wherein the terminal electrode and the wiring are formed using the same conductive layer.

6. The semiconductor device according to claim 1, wherein the semiconductor device is a photodetector.

7. The semiconductor device according to claim 1, wherein the semiconductor device is incorporated into an electronic device selected from the group consisting of a mobile phone, a computer, a display device, and a digital camera.

8. A semiconductor device comprising at least:

a first terminal electrode;

a second terminal electrode;

a first wiring;

a second wiring;

a protection circuit; and

an integrated circuit,

wherein the first terminal electrode is electrically connected to a first region of the integrated circuit through the first wiring,

wherein the second terminal electrode is electrically connected to a second region of the integrated circuit through the second wiring,

wherein at least a part of the first wiring placed between the first terminal electrode and the integrated circuit is electrically connected to a first portion of the protection circuit without branching, and

wherein at least a part of the second wiring placed between the second terminal electrode and the integrated circuit is electrically connected to a second portion of the protection circuit without branching.

9. The semiconductor device according to claim 8, wherein power supply voltage is configured to be applied to the first terminal electrode.

10. The semiconductor device according to claim 8, wherein the protection circuit includes a diode.

11. The semiconductor device according to claim 8, wherein the protection circuit includes a semiconductor film.

12. The semiconductor device according to claim 8, wherein the first terminal electrode and the first wiring are formed using the same conductive layer.

13. The semiconductor device according to claim 8, wherein the semiconductor device is a photodetector.

14. The semiconductor device according to claim 8, wherein the semiconductor device is incorporated into an electronic device selected from the group consisting of a mobile phone, a computer, a display device, and a digital camera.

15. The semiconductor device according to claim 8, wherein the first wiring and the second wiring are crossed each other.

16. A semiconductor device comprising at least:

a first terminal electrode;

a second terminal electrode;

a first wiring;

a second wiring;

a third wiring electrically connecting the second wiring;

a protection circuit; and

an integrated circuit,

wherein the first terminal electrode is electrically connected to a first region of the integrated circuit through the first wiring,

wherein the second terminal electrode is electrically connected to a second region of the integrated circuit through the second wiring,

wherein at least a part of the first wiring placed between the first terminal electrode and the integrated circuit is electrically connected to a first portion of the protection circuit without branching,

wherein at least a part of the second wiring placed between the second terminal electrode and the integrated circuit is electrically connected to a second portion of the protection circuit without branching, and

wherein the first terminal electrode overlaps with the third wiring with an insulating film interposed therebetween.

17. The semiconductor device according to claim 16, wherein power supply voltage is configured to be applied to the first terminal electrode.

18. The semiconductor device according to claim 16, wherein the protection circuit includes a diode.

19. The semiconductor device according to claim 16, wherein the protection circuit includes a semiconductor film.

20. The semiconductor device according to claim 16, wherein the first terminal electrode and the first wiring are formed using the same conductive layer.

21. The semiconductor device according to claim 16, wherein the semiconductor device is a photodetector.

22. The semiconductor device according to claim 16, wherein the semiconductor device is incorporated into an electronic device selected from the group consisting of a mobile phone, a computer, a display device, and a digital camera.