SEMICONDUCTOR MEMORY DEVICE INCLUDING NONVOLATILE MEMORY CELL AND DATA WRITING METHOD THEREOF

• US 20100329013A1
• Filed: 04/14/2010
• Published: 12/30/2010
• Est. Priority Date: 06/25/2009
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Suzuki, Yuya, SHIKATA, Go
• Application Number:
  US12/759,941
• Publication Number:
  US 20100329013A1
• Time in Patent Office: Days
• US Class Current: 365/185.18
• CPC Class Codes: G11C 16/0483 comprising cells having several storage transistors connected in series
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/3454 Arrangements for verifying correct programming or for detecting overprogrammed cells
• CPC Class Codes: G11C 16/3459 Circuits or methods to verify correct programming of nonvolatile memory cells

Abstract

A semiconductor memory device includes memory cells, bit lines, and first and second control circuits. The first control circuit supplies a write voltage and a write control voltage to a selected memory cell to write the data in the selected memory cell, the first control circuit changes a supply state of the write control voltage to further write the data when the selected memory cell reaches a first write state by the write, the first control circuit further changes the supply state of the write control voltage to prohibit the write when the selected memory cell reaches a second write state by the write. The second control circuit controls a rising of the write control voltage when the first control circuit starts the writing to make the selected memory cell the second write state.

Claims

1. A semiconductor memory device comprising:

a plurality of nonvolatile memory cells in which pieces of data are stored as thresholds having different levels;

a plurality of bit lines which are connected to the nonvolatile memory cells;

a first control circuit which supplies a write voltage and a write control voltage to a selected memory cell to write the data in the selected memory cell, the first control circuit changing a supply state of the write control voltage to further write the data when the selected memory cell reaches a first write state by the write, the first control circuit further changing the supply state of the write control voltage to prohibit the write when the selected memory cell reaches a second write state by the write; and

a second control circuit which controls a rising of the write control voltage when the first control circuit starts the writing to make the selected memory cell the second write state.

2. The device according to claim 1, wherein the second control circuit slows a rising speed of the write control voltage.

3. The device according to claim 1, wherein the second control circuit delays a rising timing of the write control voltage.

4. The device according to claim 1, wherein the first control circuit includes a MOS transistor which is capable of transferring the write control voltage to the bit line in order to put the selected memory cell into the second write state, and

the second control circuit controls a gate potential of the MOS transistor.

5. The device according to claim 4, wherein the second control circuit includes a capacitor element, and

the second control circuit controls a rate of change of the gate potential of the MOS transistor according to a capacitance of the capacitor element.

6. The device according to claim 5, wherein the capacitance of the capacitor element is variable.

7. The device according to claim 1, wherein the plurality of the bit lines includes a first bit line and a second bit line,

the first control circuit includes first and second MOS transistors which are capable of transferring the write control voltage to first and second bit lines in order to put the selected memory cells into the second write state, respectively, and

the second control circuit controls gate potentials of the first and second MOS transistors.

8. The device according to claim 7, wherein the second control circuit turns on the first MOS transistor before the second MOS transistor is turned on.

9. The device according to claim 8, wherein the second control circuit includes:

first and second transfer gates which transfer gate potentials to the first and second MOS transistors, respectively; and

a delay circuit which delays a first signal to generate a second signal, the first signal turning on the first transfer gate, the second signal turning on the second transfer gate.

10. The device according to claim 1, wherein each of the memory cells is a MOS transistor with a stacked gate, the stacked gate including a charge accumulation layer and a control gate.

13. The method according to claim 2, wherein the capacitance of the capacitor element is variable.

11. A method for writing data of a semiconductor memory device, comprising:

supplying a write voltage and a write control voltage to a memory cell to perform first write of data to the memory cell;

changing a supply state of the write control voltage to perform second write when the memory cell reaches a first write state by the first write; and

changing further the supply state of the write control voltage to prohibit the write when the memory cell reaches a second write state by the second write,

wherein a rising speed of the write control voltage is slowed.

12. The method according to claim 11, wherein the device includes:

a MOS transistor which is capable of transferring the write control voltage to a bit line in order to put the memory cell into the second write state; and

a control circuit which includes a capacitor element, the control circuit controlling a rate of change of a gate potential of the MOS transistor according to capacitance of the capacitor element.

14. The method according to claim 11, wherein the memory cell is a MOS transistor with a stacked gate, the stacked gate including a charge accumulation layer and a control gate.

15. A method for writing data of a semiconductor memory device, comprising:

supplying a write voltage and a write control voltage to a memory cell to perform first write of data to the memory cell;

changing a supply state of the write control voltage to perform second write when the memory cell reaches a first write state by the first write; and

changing further the supply state of the write control voltage to prohibit the write when the memory cell reaches a second write state by the second write,

wherein a rising timing of the write control voltage is delayed in the second write.

16. The method according to claim 15, wherein the write control voltage is provided to a first bit line and a second bit line electrically connected to a current pass of the memory cell, and

the device includes:

first and second MOS transistors which are capable of transferring the write control voltage to first and second bit lines, respectively; and

a control circuit which controls gate potentials of the first and second MOS transistors in the second write.

17. The method according to claim 16, wherein the control circuit turns on the first MOS transistor before the second MOS transistor is turned on in the second write.

18. The method according to claim 15, wherein the memory cell is a MOS transistor with a stacked gate, the stacked gate including a charge accumulation layer and a control gate.