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SEMICONDUCTOR MEMORY DEVICE INCLUDING NONVOLATILE MEMORY CELL AND DATA WRITING METHOD THEREOF

  • US 20100329013A1
  • Filed: 04/14/2010
  • Published: 12/30/2010
  • Est. Priority Date: 06/25/2009
  • Status: Abandoned Application
First Claim
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1. A semiconductor memory device comprising:

  • a plurality of nonvolatile memory cells in which pieces of data are stored as thresholds having different levels;

    a plurality of bit lines which are connected to the nonvolatile memory cells;

    a first control circuit which supplies a write voltage and a write control voltage to a selected memory cell to write the data in the selected memory cell, the first control circuit changing a supply state of the write control voltage to further write the data when the selected memory cell reaches a first write state by the write, the first control circuit further changing the supply state of the write control voltage to prohibit the write when the selected memory cell reaches a second write state by the write; and

    a second control circuit which controls a rising of the write control voltage when the first control circuit starts the writing to make the selected memory cell the second write state.

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