Overlay Target for Polarized Light Lithography

• US 20100330469A1
• Filed: 09/07/2010
• Published: 12/30/2010
• Est. Priority Date: 09/01/2005
• Status: Active Grant

• Current Assignee: Sajan Marokkey
• Original Assignee: Sajan Marokkey
• Inventors: Marokkey, Sajan
• Granted Patent: US 8,203,223 B2
• Time in Patent Office: Days
• US Class Current: 430/5
• CPC Class Codes: G03F 7/70566 Polarisation control
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
• CPC Class Codes: G03F 7/70683 Mark designs

Abstract

A target and method for use in polarized light lithography. A preferred embodiment comprises a first structure located on a reference layer, wherein the first structure is visible through a second layer, and a second structure located on the second layer, wherein the second structure is formed from a photomask containing a plurality of sub-structures oriented in a first orientation, wherein a polarized light is used to pattern the second structure onto the second layer, and wherein a polarization of the polarized light is the same as the orientation of the plurality of sub-structures. The position, size, and shape of the second structure is dependent upon a polarity of the polarized light, permitting a single design for an overlay target to be used with different polarities of polarized light.

Claims

1. An overlay target comprising:

a first structure located on a first layer, the first structure being visible through a second layer; and

a second structure located on the second layer, the second structure comprising a first plurality of columns and a second plurality of columns, all oriented along a first orientation, the first plurality of columns being longer than the second plurality of columns, wherein the second plurality of columns is arranged between the first plurality of columns.

2. The overlay target of claim 1, wherein first plurality of columns comprises four columns on each side of the second plurality of columns.

3. The overlay target of claim 1, further comprising a third structure located on the second layer, the third structure comprising a third plurality of columns all oriented along a second orientation.

4. The overlay target of claim 3, wherein the second orientation of the third plurality of columns is orthogonal to the first orientation of the first and second plurality of columns.

5. The overlay target of claim 3, wherein the third plurality of columns is encompassed by the first and second plurality of columns.

6. The overlay target of claim 3, wherein the third structure further comprises a fourth plurality of columns and wherein the fourth plurality of columns are smaller than the third plurality of columns.

7. The overlay target of claim 6, wherein the fourth plurality of columns is arranged between the third plurality of columns.

8. An overlay target comprising:

a plurality of vertical components; and

a plurality of horizontal components, wherein the plurality of vertical components surrounds the plurality of horizontal components and wherein the plurality of vertical components and the plurality of horizontal components are arranged on a same layer.

9. The overlay target of claim 8, wherein the plurality of vertical components comprises a plurality of long vertical components and a plurality of short vertical components.

10. The overlay target of claim 8, wherein the plurality of vertical components and the plurality of horizontal components have substantially equal width and pitch.

11. An overlay target for use in aligning layers of a semiconductor wafer, the overlay target comprising:

a first structure located on a reference layer, the first structure being visible through a second layer; and

a second structure located on the second layer, the second structure being formed from a photomask containing a plurality of sub-structures, all oriented along a first orientation, wherein a polarized light is used to pattern the second structure onto the second layer, and wherein a polarization of the polarized light is the same as the orientation of the plurality of sub-structures.

12. The overlay target of claim 11, further comprising a third structure located on the second layer, the third structure encompassed within the second structure, the third structure being formed from a second plurality of sub-structures, all oriented along a second orientation, wherein the second orientation is different from the first orientation, wherein a second polarized light is used to pattern the third structure onto the second layer, and wherein a polarization of the second polarized light is the same as the orientation of the second plurality of sub-structures.

13. The overlay target of claim 11, wherein the second structure is contained within the first structure.

14. The overlay target of claim 12, wherein the third structure is contained within the second structure.

15. The overlay target of claim 11, wherein the sub-structures of the second structure have substantially equal width and pitch.

16. The overlay target of claim 12, wherein the second sub-structures of the third structure have substantially equal width and pitch.

17. The overlay target of claim 16, wherein the plurality of sub-structures of the second structure and the plurality of second sub-structures of the third structures have substantially equal width and pitch.

18. The overlay target of claim 13, wherein the sub-structures of the second structure comprise components with different length.

19. The overlay target of claim 14, wherein the second sub-structure of a third structure comprise components with the same length.

20. The overlay target of claim 17, wherein the dimensions of width and pitch are kept close to design rules of the layer being patterned.