Oxide semiconductor target and manufacturing method of oxide semiconductor device by using the same
First Claim
1. An oxide semiconductor target with an aim of forming a thin film oxide semiconductor, which is a sintered oxide comprising zinc oxide and tin oxide (IV or VI) is a main ingredient wherein a composition of zinc (Zn) and tin (Sn) (Zn/(Zn+Sn)) is from 0.6 to 0.8, and the electric resistivity of the sintered body is 1 Ω
- cm or higher.
1 Assignment
0 Petitions
Accused Products
Abstract
An oxide semiconductor target of a ZTO (zinc tin complex oxide) type oxide semiconductor material of an appropriate (Zn/(Zn+Sn)) composition having high mobility and threshold potential stability and with less restriction in view of the cost and the resource and with less restriction in view of the process, and an oxide semiconductor device using the same, in which a sintered Zn tin complex oxide with a (Zn/(Zn+Sn)) composition of 0.6 to 0.8 is used as a target, the resistivity of the target itself is at a high resistance of 1 Ωcm or higher and, further, the total concentration of impurities is controlled to 100 ppm or less.
-
Citations
17 Claims
- 1. An oxide semiconductor target with an aim of forming a thin film oxide semiconductor, which is a sintered oxide comprising zinc oxide and tin oxide (IV or VI) is a main ingredient wherein a composition of zinc (Zn) and tin (Sn) (Zn/(Zn+Sn)) is from 0.6 to 0.8, and the electric resistivity of the sintered body is 1 Ω
-
17. An oxide semiconductor target for depositing a thin film semiconductor film, in which
a composition of zinc (Zn) and tin (Sn) (Zn/(Zn+Sn)) is from 0.6 to 0.8, an electric resistivity is 1 Ω - cm or higher, and
the total concentration of boron, aluminum, gallium, indium, thallium, nitrogen, phosphorus, arsenic, antimony, and bismuth in the sintered oxide is 100 ppm or less, and the target is a sintered oxide comprising zinc oxide and tin oxide as a main ingredient.
- cm or higher, and
Specification