Oxide semiconductor target and manufacturing method of oxide semiconductor device by using the same

• US 20100330738A1
• Filed: 04/09/2010
• Published: 12/30/2010
• Est. Priority Date: 04/13/2009
• Status: Abandoned Application

• Current Assignee: Hitachi Metals (Thailand) Ltd.
• Original Assignee: Hitachi Metals (Thailand) Ltd.
• Inventors: Fukushima, Hideko, Kurita, Fumi, Uchiyama, Hiroyuki, Wakana, Hironori, Kawamura, Tetsufumi
• Application Number:
  US12/662,305
• Publication Number:
  US 20100330738A1
• Time in Patent Office: Days
• US Class Current: 438/104
• CPC Class Codes: C04B 2235/3284 Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
• CPC Class Codes: C04B 2235/3293 Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
• CPC Class Codes: C04B 2235/6585 at an oxygen percentage above that of air
• CPC Class Codes: C04B 2235/72 Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
• CPC Class Codes: C04B 2235/722 Nitrogen content
• CPC Class Codes: C04B 2235/727 Phosphorus or phosphorus compound content
• CPC Class Codes: C04B 2235/77 Density
• CPC Class Codes: C04B 35/453 based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
• CPC Class Codes: C04B 35/457 based on tin oxides or stannates
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An oxide semiconductor target of a ZTO (zinc tin complex oxide) type oxide semiconductor material of an appropriate (Zn/(Zn+Sn)) composition having high mobility and threshold potential stability and with less restriction in view of the cost and the resource and with less restriction in view of the process, and an oxide semiconductor device using the same, in which a sintered Zn tin complex oxide with a (Zn/(Zn+Sn)) composition of 0.6 to 0.8 is used as a target, the resistivity of the target itself is at a high resistance of 1 Ωcm or higher and, further, the total concentration of impurities is controlled to 100 ppm or less.

Claims

1. An oxide semiconductor target with an aim of forming a thin film oxide semiconductor, which is a sintered oxide comprising zinc oxide and tin oxide (IV or VI) is a main ingredient wherein a composition of zinc (Zn) and tin (Sn) (Zn/(Zn+Sn)) is from 0.6 to 0.8, and the electric resistivity of the sintered body is 1 Ω

cm or higher.

2. An oxide semiconductor target according to claim 1, wherein the composition (Zn/(Zn+Sn)) is from 0.65 to 0.7.

3. An oxide semiconductor target according to claim 1, wherein the total concentration of boron, aluminum, gallium, indium, thallium, nitrogen, phosphorus, arsenic, antimony, and bismuth in the sintered oxide is 100 ppm or less.

4. An oxide semiconductor target according to claim 1, wherein the thin film oxide semiconductor is used as a channel layer of a thin film transistor or a hetero structure field effect transistor.

5. A method of manufacturing an oxide semiconductor device using the oxide semiconductor target according to claim 1, and depositing an oxide semiconductor film as a channel layer by a sputtering method using high frequency waves.

6. A method of manufacturing the oxide semiconductor device according to claim 5, wherein

the oxide semiconductor film has a resistivity of 1×

10<sup>−

1</sup> Ω

cm or higher.

7. A method of manufacturing an oxide semiconductor device according to claim 5, wherein

a sputtering gas used for the sputtering method using the high frequency waves contains 10% or more of an oxygen gas.

8. A method of manufacturing an oxide semiconductor device according to claim 5, wherein

the sputtering method using the high frequency waves is an RF sputtering, RF magnetron sputtering, or electron cyclotron resonance sputtering.

9. A method of manufacturing an oxide semiconductor device according to claim 7, wherein

the sputtering gas comprises argon as a main ingredient.

10. A method of manufacturing an oxide semiconductor device according to claim 5, wherein

deposition is conducted by a deposition method applying a beam instead of the sputtering method by using the high frequency waves.

11. A method of manufacturing an oxide semiconductor device according to claim 10, wherein

the deposition method by applying the beam is electron vapor deposition, ion plating, or pulse laser vapor deposition in an oxygen containing atmosphere.

12. A method of manufacturing an oxide semiconductor device according to claim 5, comprising:

etching the oxide semiconductor film with an etching solution including an organic acid as a main ingredient or an etching solution including an inorganic acid as a main ingredient.

13. A method of manufacturing the oxide semiconductor device according to claim 12, wherein

the organic acid is oxalic acid or acetic acid, and the inorganic acid is a halogen type or a nitric acid type.

14. A method of manufacturing an oxide semiconductor device according to claim 5, comprising:

fabricating the oxide semiconductor film by dry etching.

15. A method of manufacturing an oxide semiconductor device according to claim 14, wherein

the etching gas used for the dry etching is a halogen type gas.

16. A method of manufacturing an oxide semiconductor device according to claim 15, wherein

the etching gas used for the dry etching contains fluorine.

17. An oxide semiconductor target for depositing a thin film semiconductor film, in which

a composition of zinc (Zn) and tin (Sn) (Zn/(Zn+Sn)) is from 0.6 to 0.8,

an electric resistivity is 1 Ω

cm or higher, and

the total concentration of boron, aluminum, gallium, indium, thallium, nitrogen, phosphorus, arsenic, antimony, and bismuth in the sintered oxide is 100 ppm or less, and

the target is a sintered oxide comprising zinc oxide and tin oxide as a main ingredient.