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Oxide semiconductor target and manufacturing method of oxide semiconductor device by using the same

  • US 20100330738A1
  • Filed: 04/09/2010
  • Published: 12/30/2010
  • Est. Priority Date: 04/13/2009
  • Status: Abandoned Application
First Claim
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1. An oxide semiconductor target with an aim of forming a thin film oxide semiconductor, which is a sintered oxide comprising zinc oxide and tin oxide (IV or VI) is a main ingredient wherein a composition of zinc (Zn) and tin (Sn) (Zn/(Zn+Sn)) is from 0.6 to 0.8, and the electric resistivity of the sintered body is 1 Ω

  • cm or higher.

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