ROTATIONAL ANTENNA AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

• US 20110000619A1
• Filed: 03/04/2008
• Published: 01/06/2011
• Est. Priority Date: 02/29/2008
• Status: Active Grant

• Current Assignee: Allied TechFinders Co., Ltd.
• Original Assignee: Allied TechFinders Co., Ltd.
• Inventors: Suh, Kee Won
• Granted Patent: US 9,526,159 B2
• Time in Patent Office: Days
• US Class Current: 156/345.33
• CPC Class Codes: C23C 16/507 using external electrodes, e.g. in tunnel type reactors
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32568 Relative arrangement or disposition of electrodes; moving means
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence
• CPC Class Codes: H05H 1/4652 using inductive coupling means, e.g. coils

Abstract

A rotational antenna and a semiconductor manufacturing device provided with the same are disclosed. The rotational antenna includes a plurality of coils connected in parallel to a high frequency power source and arranged at a regular interval around an axis in a symmetrical relationship with respect to the axis, wherein an electromagnetic field for generating inductively coupled plasma is uniformly formed when the coils are rotated about the axis.

Claims

1. A rotational antenna comprising:

a plurality of coils connected in parallel to a high frequency power source and arranged at a regular interval around an axis in a symmetrical relationship with respect to the axis, wherein an electromagnetic field for generating inductively coupled plasma is uniformly formed when the coils are rotated about the axis.

2. The rotational antenna as recited in claim 1, wherein the coils comprise:

a center coil applied with the high frequency power and serving as a rotation center axis; and

a plurality of branch coils arranged at a regular interval around the center coil so that the branch coils are symmetrically disposed with respect to the center axis, and connected to the center coil at first ends thereof, each of the branch coils extending away from and then toward the center coil, the branch coils having grounding parts at second ends thereof.

3. The rotational antenna as recited in claim 1, wherein a substantially constant average voltage is applied to the coils along a direction extending away from a starting point about which the coils make rotation.

4. The rotational antenna as recited in claim 1, wherein each of the coils is formed of a conductor pipe through which a coolant flows.

5. A semiconductor manufacturing device comprising:

a chamber for receiving a wafer, the chamber supplied with a reaction gas; and

a rotational antenna including a plurality of coils connected in parallel to a high frequency power source and arranged at a regular interval around an axis in a symmetrical relationship with respect to the axis,

wherein an electromagnetic field for generating inductively coupled plasma is uniformly formed when the coils are rotated about the axis.

6. The semiconductor manufacturing device as recited in claim 5, wherein the coils comprise a center coil applied with high frequency power and serving as a rotation center axis and a plurality of branch coils arranged at a regular interval around the center coil so that the branch coils are symmetrically disposed with respect to the center axis, the branch coils being connected to the center coil at first ends thereof to receive the high frequency power, the branch coils having grounding parts at second ends thereof, the grounding parts being arranged adjacent to the center coil.

7. The semiconductor manufacturing device as recited in claim 6, wherein each of the center coil and the branch coils has a coolant path through which a coolant flows.

8. The semiconductor manufacturing device as recited in claim 5, wherein the rotational antenna is rotatably mounted to the outside or the inside of the chamber.

9. The semiconductor manufacturing device as recited in claim 5, further comprising:

a rotator to which the rotational antenna is attached for unitary rotation with the rotator; and

a housing for rotatably supporting the rotator.

10. The semiconductor manufacturing device as recited in claim 9, wherein the housing has a coolant supply part and a coolant discharge part, wherein the rotator has coolant channels through which a coolant is transferred to the rotational antenna, and wherein seals are provided between the coolant supply part and the coolant channel and between the coolant discharge part and the coolant channel.

11. The semiconductor manufacturing device as recited in claim 9, wherein the coils comprise a center coil applied with high frequency power and serving as a rotation center axis and a plurality of branch coils arranged at a regular interval around the center coil, the center coil being electrically insulated from the rotator, the branch coils having grounding parts at distal ends thereof, the grounding parts being grounded in contact with the rotator.

12. The semiconductor manufacturing device as recited in claim 5, further comprising:

a gas supply plate having gas grooves and gas holes formed in a radial direction and a circumferential direction for uniform injection of the reaction gas.

13. The semiconductor manufacturing device as recited in claim 5, wherein a substantially constant average voltage is applied to the coils along a direction extending away from a starting point about which the coils make rotation.