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SEMICONDUCTOR MATERIAL, METHOD OF MAKING THE SAME, AND SEMICONDUCTOR DEVICE

  • US 20110001127A1
  • Filed: 12/17/2008
  • Published: 01/06/2011
  • Est. Priority Date: 12/27/2007
  • Status: Active Grant
First Claim
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1. A semiconductor material comprising:

  • a composition graded layer, formed on a Si substrate or an interlayer formed on the Si substrate, comprising a composition of AlXGa1-XN graded such that a content ratio of Al in the composition decreases continuously or discontinuously in a crystal growing direction;

    a superlattice composite layer, formed on the composition graded layer, comprising a high-Al-containing layer comprising a composition of AlYGa1-YN (0.5≦

    Y≦

    1) and a low Al-containing layer comprising a composition AlZGa1-ZN (0≦

    Z≦

    0.5) that are laminated alternately; and

    a nitride semiconductor layer formed on the superlattice composite layer.

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