OXIDE SEMICONDUCTOR MATERIAL, METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR MATERIAL, ELECTRONIC DEVICE AND FIELD EFFECT TRANSISTOR

• US 20110001136A1
• Filed: 11/12/2008
• Published: 01/06/2011
• Est. Priority Date: 11/15/2007
• Status: Abandoned Application

• Current Assignee: Sumitomo Chemical Company Limited
• Original Assignee: Sumitomo Chemical Company Limited
• Inventors: Fukuhara, Noboru, Kohiro, Kenji, Hasegawa, Akira
• Application Number:
  US12/743,081
• Publication Number:
  US 20110001136A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02573 Conductivity type
• CPC Class Codes: H01L 21/02581 Transition metal or rare earth elements
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 29/26 including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24 , e.g. alloys
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The present invention provides an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor. The oxide semiconductor material contains Zn, Sn, and O, does not contain In, and has an electron carrier concentration higher than 1×10¹⁵/cm³ and less than 1×10¹⁸/cm³. The electronic device comprises a semiconductor layer formed of the oxide semiconductor material, and an electrode provided on the semiconductor layer. The field effect transistor comprises a source electrode and a drain electrode which are arranged in separation from each other on the semiconductor layer; and a gate electrode placed at a position where the gate electrode can apply a bias potential to a region of the semiconductor layer positioned between the source electrode and the drain electrode.

Claims

1. An oxide semiconductor material comprising Zn, Sn, and O, containing no In, and having an electron carrier concentration higher than 1×

10¹⁵/cm³ and less than 1×

10¹⁸/cm³.

2. The oxide semiconductor material according to claim 1, further comprising a dopant.

3. The oxide semiconductor material according to claim 2, wherein the dopant is at least one member selected from the group consisting of Al, Zr, Mo, Cr, W, Nb, Ti, Ga, Hf, Ni, Ag, V, Ta, Fe, Cu, Pt, Si, and F.

4. The oxide semiconductor material according to claim 1, wherein the oxide semiconductor material is amorphous.

5. An electronic device comprising a semiconductor layer formed of the oxide semiconductor material according to claim 1 and an electrode provided on the semiconductor layer.

6. A field effect transistor comprising:

a semiconductor layer formed of the oxide semiconductor material according to claim 1, a source electrode and a drain electrode which are arranged in separation from each other on the semiconductor layer; and

a gate electrode placed at a position where the gate electrode can apply a bias potential to a region of the semiconductor layer positioned between the source electrode and the drain electrode.

7. A method of manufacturing an oxide semiconductor material, comprising the steps (i)-(iv):

(i) a step of preparing an oxide target containing Zn, Sn, and O;

(ii) a step of placing a substrate in a chamber;

(iii) a step of placing the oxide target in the chamber; and

(iv) a step of depositing a target material on the substrate by sputtering with rare gas the oxide target placed in the chamber, wherein

a dopant material is further placed in a position where it is sputtered simultaneously with the oxide target during the sputtering.