Thin flat solid state light source module

• US 20110001148A1
• Filed: 02/23/2010
• Published: 01/06/2011
• Est. Priority Date: 07/06/2009
• Status: Active Grant

• Current Assignee: Yi Sun, Zhuo Sun
• Original Assignee: Yi Sun, Zhuo Sun
• Inventors: Sun, Yi, Sun, Zhuo
• Granted Patent: US 9,048,404 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/641 characterized by the materials

Abstract

Thin, flat solid state light source device and methods for manufacturing is described. LED chips and their circuit boards are mounted on a thermal conductive substrate. The LED chips are surrounded with a flat layer of reflecting material which may embed the circuit boards. The LED chips and the reflecting layer is then topped with a layer of diffusion material and a layer of cover material.

Claims

1. A flat LED package device, comprising:

a thermal conductive substrate;

at least one LED chip mounted on said substrate;

at least one electrical circuit pattern layered on said substrate, wherein said LED chip and said circuit are electrically connected; and

a flat reflecting layer, deposited on said substrate, surrounding said LED chip.

2. The LED package device of claim 1, further comprising a flat light-conductive diffusion layer deposited on top of said LED chip, said circuit pattern, and said flat reflecting layer, sealing said LED chip, said circuit pattern, and said reflecting layer from air.

3. The LED package device of claim 1, wherein the surface of said LED chip is coated with a thin layer of phosphor composite.

4. The LED package device of claim 1, further comprising a cover layer, covering and sealing said flat reflecting layer, said LED chip, and said circuit pattern from air.

5. The LED package device of claim 1, wherein said substrate is coated with an insulating layer that is thermal conductive and electrical insulating;

and said insulating layer is a carbon or ceramic composite containing diamond, AlN, BN, and/or SiC.

6. The LED package device of claim 1, wherein said flat reflecting layer also covers and seals said circuit pattern, but exposes the surface of said LED chip.

7. The LED package device of claim 1, wherein said LED chip is mounted on said substrate via a layer of thermal conductive adhesive material.

8. The LED package device of claim 1, wherein said LED chip is soldered directly on said substrate.

9. The LED package device of claim 1, wherein said substrate comprises material selected from the group consisting of Al alloys, Cu alloys, carbon-carbon composites containing carbon fibers, nanotubes, diamonds, graphites and graphenes, and ceramic composite containing AlN, BN, and/or SiC, wherein their thermal conductivity is not less than 200 W/mK, and the thickness of the substrate ranges between about 0.5 to about 5 mm.

10. The LED package device of claim 1, wherein said reflecting layer is a mixture of inorganic-organic composite containing oxide micro-particles, and organic material comprise a material selected from a group consisting of epoxy resin, silicone resin, polycarbonate, polyvinyl acetate, polyurethane, polystyrene, and polyacrylate.

11. The LED package device of claim 10, wherein said oxide micro-particles are selected a group consisting of TiO₂, MgO, ZnO, SnO₂, SiO₂, and Al₂O₃, in the size of about 100-400 nm.

12. The LED package device of claim 2, wherein said diffusion layer comprises silicone or epoxy gel composites containing oxide micro-particles or diamond micro particles, of sizes between about 10 to about 100 nm with the ratio of the particles to silicon or epoxy gel below about 5% by weight.

13. The LED package device of claim 2, further comprising a cover layer deposited on top of said diffusion layer, covering and sealing the diffusion layer.

14. The LED package device of claim 13, wherein said cover layer comprises phosphor mixed silicon with phosphor to silicon ratio of about 10-80% by weight, and the thickness of the cover layer in the range of about 0.2-500 μ

m.

15. The LED package device of claim 13, wherein said cover layer is a glass or polycarbonate plate coated with a film of phosphor composite.

16. The LED package device of claim 13, wherein the surface of said LED chip is coated with a thin layer of phosphor composite.

17. The LED package device of claim 13, wherein the electrode pads of the LED chip is mounted with the electrode pads of the circuit pattern layer.

18. A flat LED lamp device, comprising:

a thermal conductive substrate;

plurality of LED chips mounted on said substrate, and arrayed in parallel;

one or more electrical circuits layered on said substrate, and placed in between said LED chips, wherein said LED chip and said circuit are electrically connected; and

a flat reflecting layer, deposited on said substrate, surrounding said LED chips.

19. The LED lamp device of claim 18, further comprising a flat diffusion layer deposited on top of said LED chip arrays, said circuits, and said flat reflecting layer, sealing the LED chips, the circuits and the reflecting layer from air.

20. The LED lamp device of claim 18, wherein the surface of at least one of said LED chips is coated with a thin layer of phosphor composite.

21. The LED lamp device of claim 18, further comprising a cover layer, covering and sealing said flat reflecting layer, said plurality of LED chips, and said circuits from air.

22. The LED lamp device of claim 18, wherein said substrate is coated with an insulating layer that is thermal conductive and electrical insulating, and said insulating layer is a carbon or ceramic composite containing diamond, AlN, BN, and/or SiC.

23. The LED lamp device of claim 18, wherein said flat reflecting layer also covers and seals said circuits, but exposes the surface of said LED chip.

24. The LED lamp device of claim 18, wherein at least one of said LED chips is mounted on said substrate via a layer of thermal conductive adhesive material.

25. The LED lamp device of claim 18, wherein at least one of said LED chips is soldered directly on said substrate.

26. The LED lamp device of claim 18, wherein said substrate comprises material selected from the group consisting of Al alloys, Cu alloys, carbon-carbon composites containing carbon fibers, nanotubes, diamonds, graphites and graphenes, and ceramic composites containing AlN, BN, and/or SiC, wherein their thermal conductivity is not less than 200 W/mK, and the thickness of the substrate ranges between about 0.5 to 5 mm.

27. The LED lamp device of claim 18, wherein said reflecting layer is a mixture of inorganic-organic composite containing oxide micro-particles, and organic material comprise a material selected from a group consisting of epoxy resin, silicone resin, polycarbonate, polyvinyl acetate, polyurethane, polystyrene, and polyacrylate.

28. The LED lamp device of claim 27, wherein said oxide micro-particles are selected a group consisting of TiO₂, MgO, ZnO, SnO₂, SiO₂, and Al₂O₃, in the size of about 100-400 nm.

29. The LED lamp device of claim 19, wherein said diffusion layer comprises silicone or epoxy gel composites containing oxide micro-particles or diamond micro particles, of sizes between about 10 to 100 nm with the ratio of the particles to silicon or epoxy gel below about 5% by weight.

30. The LED lamp device of claim 19, further comprising a cover layer deposited on top of said diffusion layer, covering and sealing the diffusion layer.

31. The LED lamp device of claim 30, wherein said cover layer comprises phosphor mixed silicon with phosphor to silicon ratio of 10-80% by weight, and the thickness of the cover layer in the range of about 0.2-500 μ

m.

32. The LED lamp device of claim 30, wherein said cover layer is a glass or polycarbonate plate coated with a film of phosphor composite.

33. The LED lamp device of claim 30, wherein the surface of at least one of said LED chips is coated with a thin layer of phosphor composite.

34. The LED lamp device of claim 30, wherein the electrode pads of at least of the LED chips is mounted with the electrode pads of at least one of the circuits.

35. A method for making flat LED lamp device module, comprising the actions of the steps of:

coating a thermal conductive substrate with a layer of thermal conductive and electrical insulating composite;

forming circuit boards on the insulated surface of the substrate;

mounting a plurality of LED chips via a layer of thermal conductive adhesive composite to the insulated surface of the substrate;

electrically connecting said plurality of LED chips with at least one circuit board;

depositing a flat layer of reflecting composite on the substrate surrounding the LED chips, but exposing the surfaces of the LED chips, forming a flat LED lamp package; and

depositing a light conducting cover layer over the reflecting layer and the surface of the LED chips, encapsulating the surface of lamp package.

36. The method of claim 35, further comprising the step of depositing a light diffusion layer on top of the LED chips and reflecting layer before depositing the cover layer.

37. The method of claim 36, wherein said diffusion layer comprises silicone or epoxy gel composites containing oxide micro-particles or diamond micro particles, of sizes between about 10 to 100 nm with the ratio of the particles to silicon or epoxy gel below about 5% by weight.

38. The method of claim 37, wherein the refraction index of the diffusion layer is adjusted to between around 2.6 to around 1.2 by adjusting the sizes of the micro-particles.

39. The method of claim 35, further comprising the step of coating a phosphor composite of the surface of the LED chips.

40. The method of claim 35, wherein said reflecting layer is a mixture of inorganic-organic composite containing oxide micro-particles, and organic material comprise a material selected from a group consisting of epoxy resin, silicone resin, polycarbonate, polyvinyl acetate, polyurethane, polystyrene, and polyacrylate, and said oxide micro-particles are selected a group consisting of TiO₂, MgO, ZnO, SnO₂, SiO₂, and Al₂O₃, in the size of about 100-400 nm.