SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING ROUGHNESS LAYER

• US 20110001160A1
• Filed: 09/16/2010
• Published: 01/06/2011
• Est. Priority Date: 12/20/2007
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: Hwan Hee Jeong
• Inventors: JEONG, Hwan Hee
• Granted Patent: US 8,723,202 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A semiconductor light emitting device includes a substrate, a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a roughness layer on the second conductive semiconductor layer. The second conductive semiconductor layer includes a shape of multiple horns, and the roughness layer includes a shape of multiple horns. The second conductive semiconductor layer includes a roughness in which horn shapes and inverse-horn-shaped shapes are alternately formed, and the roughness has a height of about 0.5 μm to about 1.2 μm and a diameter of about 0.3 μm to about 1.0 μm.

Claims

1. A semiconductor light emitting device comprising:

a substrate;

a first conductive semiconductor layer on the substrate;

an active layer on the first conductive semiconductor layer;

a second conductive semiconductor layer on the active layer; and

a roughness layer on the second conductive semiconductor layer,

wherein the second conductive semiconductor layer includes a shape of multiple horns,

wherein the roughness layer includes a shape of multiple horns, and

wherein the second conducive semiconductor layer comprises a roughness in which horn shapes and inverse-horn-shaped shapes are alternately formed, and the roughness has a height of about 0.5 μ

m to about 1.2 μ

m and a diameter of about 0.3 μ

m to about 1.0 μ

m.

2. The semiconductor light emitting device according to claim 1, wherein the roughness layer has a thickness of about 1,000 Å

to about 2,000 Å

.

3. The semiconductor light emitting device according to claim 1, wherein the roughness has at least one of a horn shape, a polygonal horn shape, and a random horn shape.

4. The semiconductor light emitting device according to claim 1, further comprising an N-type or P-type semiconductor layer on the second conductive semiconductor layer,

wherein the N-type or P-type semiconductor layer includes a horn-shaped roughness layer.

5. The semiconductor light emitting device according to claim 1, further comprising a transparent electrode layer on the second conductive semiconductor layer,

wherein the transparent electrode layer includes a horn-shaped roughness layer.

6. The semiconductor light emitting device according to claim 1, further comprising at least one of an undoped semiconductor layer, a buffer layer, and a substrate under the first conductive semiconductor layer.

7. The semiconductor light emitting device according to claim 1, wherein the roughness layer includes the same conductivity type dopants as the second conductive semiconductor layer.

8. The semiconductor light emitting device according to claim 1, wherein the roughness layer includes a semiconductor layer.

9. A semiconductor light emitting device comprising:

a substrate;

a first conductive semiconductor layer on the substrate;

an active layer on the first conductive semiconductor layer; and

a second conductive semiconductor layer on the active layer,

wherein the second conductive semiconductor layer comprises a first semiconductor layer comprising a shape of multiple horns, and

wherein the second conductive semiconductor layer comprises a roughness and the roughness has a height of about 0.5 μ

m to about 1.2 μ

m and a diameter of about 0.3 μ

m to about 1.0 μ

m.

10. The semiconductor light emitting device according to claim 9, further comprising a first roughness layer having an uneven upper surface and an uneven lower surface on the first semiconductor layer,

wherein the first roughness layer has the roughness structure corresponding to the multiple horns shape of the first semiconductor layer.

11. The semiconductor light emitting device according to claim 9, wherein the first semiconductor layer has a structure in which horn-shaped apex structures and inverse-horn-shaped valley structures are formed regularly or irregularly.

12. The semiconductor light emitting device according to claim 10, further comprising a second roughness layer having an uneven upper surface and an uneven lower surface on the first roughness layer, wherein the second roughness layer is formed of at least one of a transparent electrode layer and a third conductive semiconductor layer having a horn-shaped roughness.

13. The semiconductor light emitting device according to claim 10, wherein the first roughness layer includes the same conductivity type dopants as the first semiconductor layer.

14. The semiconductor light emitting device according to claim 10, wherein the first roughness layer includes a semiconductor layer.

15. The semiconductor light emitting device according to claim 12, wherein one of the first roughness layer and the second roughness layer is partially disposed on the second conductive semiconductor layer, and wherein at least a portion of the first roughness layer is disposed between the second conductive semiconductor layer and the second roughness layer.

16. The semiconductor light emitting device according to claim 10, wherein the first semiconductor layer includes a P-type semiconductor layer, and

wherein the first roughness layer is formed of a different material from the first semiconductor layer.

17. A semiconductor light emitting device comprising:

a substrate including one of sapphire (Al₂O₃), GaN, SiC, ZnO, Si, GaP, and GaAs;

a first conductive semiconductor layer on the substrate;

an active layer on the first conductive semiconductor layer;

a second conductive semiconductor layer on the active layer;

a first roughness layer on the second conductive semiconductor layer; and

a second roughness layer on the first roughness layer,

wherein one of the first roughness layer and the second roughness layer is partially disposed on the second conductive semiconductor layer,

wherein at least a portion of the first roughness layer is disposed between the second conductive semiconductor layer and the second roughness layer, and

wherein the second conductive semiconductor layer comprises a roughness and the roughness has a height of about 0.5 μ

m to about 1.2 μ

m and a diameter of about 0.3 μ

m to about 1.0 μ

m.

18. The semiconductor light emitting device according to claim 17, wherein the first roughness layer has a thickness of about 1,000 Å

to about 2,000 Å

.

19. The semiconductor light emitting device according to claim 17, further comprising a first electrode on the first conductive semiconductor layer;

and

a second electrode on the second conductive semiconductor layer,

wherein the second electrode is in direct contact with the second roughness layer.

20. The semiconductor light emitting device according to claim 17, further comprising an N-type or P-type semiconductor layer comprising a horn-shaped roughness structure on the second conductive semiconductor layer.