SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF

• US 20110001164A1
• Filed: 09/13/2010
• Published: 01/06/2011
• Est. Priority Date: 07/25/2005
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: Jin Sik Choi
• Inventors: CHOI, Jin Sik
• Granted Patent: US 9,147,797 B2
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/642 characterized by the shape

Abstract

A semiconductor light emitting device according to an embodiment includes a top layer having a top surface and a bottom surface, the top layer being an n electrode; an uneven pattern formed in the bottom surface of the n electrode; an n-type semiconductor layer formed under the n electrode, the n-type semiconductor layer having a top surface and a bottom surface; an uneven pattern formed in the top surface of the n-type semiconductor layer, the uneven pattern of the n-type semiconductor layer corresponding to the uneven pattern of the n electrode; an active layer formed under the n-type semiconductor layer; a p-type semiconductor layer formed under the active layer; and a p electrode formed under the p-type semiconductor layer.

Claims

1. A semiconductor light emitting device, comprising:

a top layer having a top surface and a bottom surface, the top layer being an n electrode;

an uneven pattern formed in the bottom surface of the n electrode;

an n-type semiconductor layer formed under the n electrode, the n-type semiconductor layer having a top surface and a bottom surface;

an uneven pattern formed in the top surface of the n-type semiconductor layer, the uneven pattern of the n-type semiconductor layer corresponding to the uneven pattern of the n electrode;

an active layer formed under the n-type semiconductor layer;

a p-type semiconductor layer formed under the active layer; and

a p electrode formed under the p-type semiconductor layer.

2. The semiconductor light emitting device of claim 1, wherein the uneven pattern extends across an entire boundary between the n electrode and the n-type semiconductor layer.

3. The semiconductor light emitting device of claim 1, wherein the n-type semiconductor layer and the p-type semiconductor layer are formed of GaN.

4. The semiconductor light emitting device of claim 1, wherein the p-type semiconductor layer is transparent.

5. The semiconductor light emitting device of claim 1, wherein the active layer has a multi-quantum well structure.

6. The semiconductor light emitting device of claim 1, further comprising a p-contact semiconductor layer between the p-type semiconductor layer and the p electrode.

7. The semiconductor light emitting device of claim 1, further comprising an uneven pattern in the p-type semiconductor layer contacting the p electrode.

8. The semiconductor light emitting device of claim 7, wherein the uneven pattern in the p-type semiconductor layer is periodic.

9. The semiconductor light emitting device of claim 7, wherein the uneven pattern in the p-type semiconductor layer is non-periodic.

10. A semiconductor light emitting device, comprising:

an n electrode, the n electrode having a top surface and a bottom surface;

an uneven pattern formed in the bottom surface of the n electrode;

an n-type semiconductor layer formed under the n electrode, the n-type semiconductor layer having a top surface and a bottom surface;

an uneven pattern formed in the top surface of the n-type semiconductor layer, the uneven pattern of the n-type semiconductor layer corresponding to the uneven pattern of the n electrode;

an active layer formed under the n-type semiconductor layer;

a p-type semiconductor layer formed under the active layer; and

a p electrode formed under the p-type semiconductor layer.

11. The semiconductor light emitting device of claim 10, wherein the uneven pattern extends across an entire boundary between the n electrode and the n-type semiconductor layer.

12. The semiconductor light emitting device of claim 10, wherein the n-type semiconductor layer and the p-type semiconductor layer are formed of GaN.

13. The semiconductor light emitting device of claim 10, wherein the p-type semiconductor layer is transparent.

14. The semiconductor light emitting device of claim 10, wherein the active layer is a multi-quantum well structure.

15. The semiconductor light emitting device of claim 10, further comprising a p-contact semiconductor layer between the p-type semiconductor layer and the p electrode.

16. The semiconductor light emitting device of claim 10, further comprising an uneven pattern in the p-type semiconductor layer contacting the p electrode.

17. The semiconductor light emitting device of claim 16, wherein the uneven pattern in the p-type semiconductor layer is periodic.

18. The semiconductor light emitting device of claim 16, wherein the uneven pattern in the p-type semiconductor layer is non-periodic.