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THREE-DIMENSIONAL INTEGRATED CIRCUIT STRUCTURE

  • US 20110001172A1
  • Filed: 09/14/2010
  • Published: 01/06/2011
  • Est. Priority Date: 03/29/2005
  • Status: Abandoned Application
First Claim
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1. An apparatus, comprising:

  • an interconnect region; and

    a multilayer semiconductor structure bonded to the interconnect region with a bonding region, the structure including two semiconductor regions having different electrical properties.

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