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NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

  • US 20110001178A1
  • Filed: 12/23/2009
  • Published: 01/06/2011
  • Est. Priority Date: 07/01/2009
  • Status: Active Grant
First Claim
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1. A nonvolatile semiconductor memory device comprising:

  • a substrate;

    a stacked body with a plurality of dielectric films and electrode films alternately stacked therein, the stacked body being provided on the substrate and having a step in its end portion for each of the electrode films;

    an interlayer dielectric film burying the end portion of the stacked body;

    a plurality of semiconductor pillars extending in the stacking direction of the stacked body and penetrating through a center portion of the stacked body;

    a charge storage layer provided between one of the electrode films and one of the semiconductor pillars; and

    a plug buried in the interlayer dielectric film and connected to a portion of each of the electrode films constituting the step,a portion of each of the dielectric films in the center portion having a larger thickness than a portion of each of the dielectric films in the end portion.

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