FUNCTIONALIZED FULLERENES FOR NANOLITHOGRAPHY APPLICATIONS
First Claim
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1. A development free method for electron beam lithography comprising the steps of:
- depositing a resist comprising functionalized fullerenes on a substrate; and
projecting an electron beam upon said resist with an accelerating voltage and dose rate that initiates thermal degradation of said resist, wherein a pattern of voids is formed in said resist.
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Abstract
A method for electron beam nanolithography without the need for development step involves depositing a film of a resist comprising functionalized fullerenes on a substrate, and writing features by exposure to an electron beam with an accelerating voltage and dose rate sufficient to promote heating or thermal degradation of the functionalized fullerene in the irradiated volume such that a pattern is generated without a subsequent development step or with an aqueous developer. Lithographic features of about 1 nm or greater can be formed.
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Citations
21 Claims
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1. A development free method for electron beam lithography comprising the steps of:
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depositing a resist comprising functionalized fullerenes on a substrate; and projecting an electron beam upon said resist with an accelerating voltage and dose rate that initiates thermal degradation of said resist, wherein a pattern of voids is formed in said resist. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A water-developable method for electron beam lithography comprising the steps of:
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depositing a resist comprising functionalized fullerenes on a substrate; projecting an electron beam upon said resist having an accelerating voltage and dose rate wherein thermal degradation of said resist occurs; and developing the resist with water wherein a pattern of voids is formed in said resist. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 20, 21)
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19. (canceled)
Specification