LIGHT EMITTING DIODE HAVING VERTICAL TOPOLOGY AND METHOD OF MAKING THE SAME
First Claim
1. A method of making a light emitting diode (LED) having vertical topology, comprising:
- forming a semiconductor layer on a substrate;
forming a first electrode on the semiconductor layer;
forming a supporting layer on the first electrode;
separating the substrate from the semiconductor layer by generating an acoustic stress wave at a portion between the substrate and the semiconductor layer; and
forming a second electrode on a surface of the semiconductor layer exposed by the separation of the substrate.
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Accused Products
Abstract
An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
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Citations
65 Claims
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1. A method of making a light emitting diode (LED) having vertical topology, comprising:
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forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; separating the substrate from the semiconductor layer by generating an acoustic stress wave at a portion between the substrate and the semiconductor layer; and forming a second electrode on a surface of the semiconductor layer exposed by the separation of the substrate. - View Dependent Claims (2, 3, 4, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65)
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5-33. -33. (canceled)
Specification