MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
First Claim
1. A manufacturing method of a semiconductor device comprising the steps of:
- forming an insulating layer over a substrate having an insulating surface;
performing dehydration or dehydrogenation on the insulating layer;
forming an oxide semiconductor layer on the insulating layer;
performing dehydration or dehydrogenation on the oxide semiconductor layer;
forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;
forming an oxide insulating film which is over the insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer and is in contact with a part of the oxide semiconductor layer; and
heating the oxide insulating film.
1 Assignment
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Accused Products
Abstract
An object is to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, impurities such as moisture existing in the gate insulating layer are reduced before formation of the oxide semiconductor film, and then heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. After that, slow cooling is performed in an oxygen atmosphere. Besides impurities such as moisture existing in the gate insulating layer and the oxide semiconductor film, impurities such as moisture existing at interfaces between the oxide semiconductor film and upper and lower films provided in contact therewith are reduced.
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Citations
27 Claims
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1. A manufacturing method of a semiconductor device comprising the steps of:
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forming an insulating layer over a substrate having an insulating surface; performing dehydration or dehydrogenation on the insulating layer; forming an oxide semiconductor layer on the insulating layer; performing dehydration or dehydrogenation on the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; forming an oxide insulating film which is over the insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer and is in contact with a part of the oxide semiconductor layer; and heating the oxide insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A manufacturing method of a semiconductor device comprising the steps of:
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forming an insulating layer over a substrate having an insulating surface; heating the insulating layer; forming an oxide semiconductor layer on the insulating layer; heating the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; forming an oxide insulating film which is over the insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer and is in contact with a part of the oxide semiconductor layer; and heating the oxide insulating film. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A manufacturing method of a semiconductor device comprising the steps of:
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forming an insulating layer over a substrate having an insulating surface; heating the insulating layer to reduce a hydrogen concentration in the insulating layer; forming an oxide semiconductor layer over the insulating layer; heating the oxide semiconductor layer to reduce a hydrogen concentration in the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; forming an oxide insulating film which is over the insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer and is in contact with a part of the oxide semiconductor layer; and heating the oxide insulating film to reduce a hydrogen concentration in the oxide insulating film. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27)
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Specification