THREE-DIMENSIONAL INTEGRATED CIRCUIT STRUCTURE
First Claim
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1. A method, comprising:
- providing an interconnect region; and
coupling a multiple layer semiconductor structure to the interconnect region through bonding.
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Abstract
A method of forming a semiconductor structure includes coupling a semiconductor structure to an interconnect region through a bonding region. The interconnect region includes a conductive line in communication with the bonding region. The bonding region includes a metal layer which covers the interconnect region. The semiconductor structure is processed to form a vertically oriented semiconductor device.
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Citations
27 Claims
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1. A method, comprising:
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providing an interconnect region; and coupling a multiple layer semiconductor structure to the interconnect region through bonding. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method, comprising:
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providing an interconnect region carried by an electronic circuit; providing a substrate which includes a support structure which carries a multiple layer structure; and coupling the multiple layer structure to the interconnect region through bonding. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A method, comprising:
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coupling a semiconductor structure to an interconnect region through a bonding region; wherein the interconnect region includes a conductive line in communication with the bonding region. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27)
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Specification