DOPING METHOD
First Claim
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1. A method of depositing a III-V compound semiconductor film on a substrate comprising the steps of:
- a) providing a substrate in a deposition chamber;
b) conveying a Group IIIA metal compound in a gaseous phase to the deposition chamber;
c) conveying a Group VA compound in a gaseous phase to the deposition chamber;
d) conveying a germanium dopant compound of the formula RxGeHy in a gaseous phase to the deposition chamber;
e) decomposing the Group IIIA metal compound, the Group VA compound and the germanium dopant compound in the deposition chamber; and
f) depositing a germanium doped III-V compound semiconductor film on the substrate;
wherein each R is independently chosen from (C3-C7)branched alkyl, (C3-C7)cyclic alkyl, (C5-C20)cyclopentadienyl and NR1R2;
R1 and R2 are independently chosen from H and (C1-C6)alkyl;
x is an integer from 1-4;
y is an integer from 0-3; and
x+y=4.
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Abstract
Methods of doping a III-V compound semiconductor film are disclosed.
24 Citations
6 Claims
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1. A method of depositing a III-V compound semiconductor film on a substrate comprising the steps of:
- a) providing a substrate in a deposition chamber;
b) conveying a Group IIIA metal compound in a gaseous phase to the deposition chamber;
c) conveying a Group VA compound in a gaseous phase to the deposition chamber;
d) conveying a germanium dopant compound of the formula RxGeHy in a gaseous phase to the deposition chamber;
e) decomposing the Group IIIA metal compound, the Group VA compound and the germanium dopant compound in the deposition chamber; and
f) depositing a germanium doped III-V compound semiconductor film on the substrate;
wherein each R is independently chosen from (C3-C7)branched alkyl, (C3-C7)cyclic alkyl, (C5-C20)cyclopentadienyl and NR1R2;
R1 and R2 are independently chosen from H and (C1-C6)alkyl;
x is an integer from 1-4;
y is an integer from 0-3; and
x+y=4. - View Dependent Claims (2, 3, 4, 5, 6)
- a) providing a substrate in a deposition chamber;
Specification