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DOPING METHOD

  • US 20110003463A1
  • Filed: 06/21/2010
  • Published: 01/06/2011
  • Est. Priority Date: 06/19/2009
  • Status: Active Grant
First Claim
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1. A method of depositing a III-V compound semiconductor film on a substrate comprising the steps of:

  • a) providing a substrate in a deposition chamber;

    b) conveying a Group IIIA metal compound in a gaseous phase to the deposition chamber;

    c) conveying a Group VA compound in a gaseous phase to the deposition chamber;

    d) conveying a germanium dopant compound of the formula RxGeHy in a gaseous phase to the deposition chamber;

    e) decomposing the Group IIIA metal compound, the Group VA compound and the germanium dopant compound in the deposition chamber; and

    f) depositing a germanium doped III-V compound semiconductor film on the substrate;

    wherein each R is independently chosen from (C3-C7)branched alkyl, (C3-C7)cyclic alkyl, (C5-C20)cyclopentadienyl and NR1R2;

    R1 and R2 are independently chosen from H and (C1-C6)alkyl;

    x is an integer from 1-4;

    y is an integer from 0-3; and

    x+y=4.

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