Please download the dossier by clicking on the dossier button x
×

FIELD-EFFECT TRANSISTOR AND METHOD FOR FABRICATING FIELD-EFFECT TRANSISTOR

  • US 20110006299A1
  • Filed: 07/07/2010
  • Published: 01/13/2011
  • Est. Priority Date: 07/09/2009
  • Status: Active Grant
First Claim
Patent Images

1. A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the active layer having an oxide semiconductor mainly containing magnesium and indium, the method comprising:

  • a deposition step of depositing an oxide film;

    a patterning step of patterning the oxide film by processes including etching to obtain the active layer; and

    a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×