RECONSTITUTED WAFER STACK PACKAGING WITH AFTER-APPLIED PAD EXTENSIONS
First Claim
1. A method of fabricating a plurality of stacked microelectronic units, comprising:
- a) providing a plurality of subassemblies each being a reconstituted wafer or portion of a reconstituted wafer and each having a front side and a rear side remote from the front side, each subassembly including a plurality of spaced apart microelectronic elements each including a semiconductor chip, the microelectronic elements having front faces exposed at the front side, contacts exposed at the front side, rear faces adjacent to the rear side, and edges extending between the front and rear faces, each subassembly further including a fill layer overlying the rear faces of the microelectronic elements and extending between the edges of adjacent microelectronic elements;
b) forming a plurality of traces at the front side of each subassembly, the traces extending from the contacts to beyond the edges of the microelectronic elements;
c) reducing a thickness of a first one of the subassemblies from the rear side to reduce a thickness of the microelectronic elements therein;
d) joining a second one of the subassemblies with the first subassembly such that the front side of the second subassembly confronts the rear side of the first subassembly and such that the front faces of microelectronic elements of the second subassembly confront the rear faces of the microelectronic elements of the first subassembly;
e) forming leads in at least one opening extending downwardly from the rear side of the second subassembly, the leads connected to the traces of the microelectronic elements of the first and second subassemblies, the at least one opening having an inclined wall at an angle relative to a normal direction with respect to the plane defined by the front faces of the microelectronic elements; and
f) severing the joined microelectronic assemblies along edges of the microelectronic elements into stacked microelectronic units, such that edge surfaces of the microelectronic units include an inclined wall of the at least one opening, each microelectronic unit including leads extending along the surface of the at least one inclined wall.
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Accused Products
Abstract
A stacked microelectronic unit is provided which can include a plurality of vertically stacked microelectronic elements (12, 12A) each having a front surface (117), contacts (22) exposed at the front surface, a rear surface (118) and edges (18, 20) extending between the front and rear surfaces. Traces (24) connected with the contacts may extend along the front surfaces towards edges of the microelectronic elements with the rear surface of at least one of the stacked microelectronic elements being adjacent to a top face (90) of the microelectronic unit. A plurality of conductors (66) may extend along edges of the microelectronic elements from the traces (24) to the top face (90). The conductors may be conductively connected with unit contacts (76) such that the unit contacts overlie the rear surface (118) of the at least one microelectronic element (12A) adjacent to the top face.
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Citations
39 Claims
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1. A method of fabricating a plurality of stacked microelectronic units, comprising:
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a) providing a plurality of subassemblies each being a reconstituted wafer or portion of a reconstituted wafer and each having a front side and a rear side remote from the front side, each subassembly including a plurality of spaced apart microelectronic elements each including a semiconductor chip, the microelectronic elements having front faces exposed at the front side, contacts exposed at the front side, rear faces adjacent to the rear side, and edges extending between the front and rear faces, each subassembly further including a fill layer overlying the rear faces of the microelectronic elements and extending between the edges of adjacent microelectronic elements; b) forming a plurality of traces at the front side of each subassembly, the traces extending from the contacts to beyond the edges of the microelectronic elements; c) reducing a thickness of a first one of the subassemblies from the rear side to reduce a thickness of the microelectronic elements therein; d) joining a second one of the subassemblies with the first subassembly such that the front side of the second subassembly confronts the rear side of the first subassembly and such that the front faces of microelectronic elements of the second subassembly confront the rear faces of the microelectronic elements of the first subassembly; e) forming leads in at least one opening extending downwardly from the rear side of the second subassembly, the leads connected to the traces of the microelectronic elements of the first and second subassemblies, the at least one opening having an inclined wall at an angle relative to a normal direction with respect to the plane defined by the front faces of the microelectronic elements; and f) severing the joined microelectronic assemblies along edges of the microelectronic elements into stacked microelectronic units, such that edge surfaces of the microelectronic units include an inclined wall of the at least one opening, each microelectronic unit including leads extending along the surface of the at least one inclined wall. - View Dependent Claims (2, 3, 4, 5, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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6. (canceled)
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20. A method of fabricating a plurality of stacked microelectronic unit, comprising:
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a) providing a plurality of subassemblies each being a reconstituted wafer or portion of a reconstituted wafer and each having a front side and a rear side remote from the front side, each subassembly including a plurality of spaced apart microelectronic elements each including a semiconductor chip, the microelectronic elements having front faces exposed at the front side, contacts exposed at the front side, rear faces adjacent to the rear side, and edges extending between the front and rear faces, each subassembly further including a plurality of traces extending from the contacts to beyond the edges of the microelectronic elements and a fill layer overlying the rear faces of the microelectronic elements and extending between the edges of adjacent microelectronic elements; b) reducing a thickness of a first one of the subassemblies from the rear side so as to reduce a thickness of the microelectronic elements therein; c) joining a second one of the subassemblies with the first subassembly such that the front faces of the microelectronic elements of the second subassembly overlie and confront the rear faces of the microelectronic elements of the first subassembly; d) forming leads in at least one opening extending downwardly from the rear side of the second subassembly, the leads being conductively connected to the traces of the microelectronic elements of the first and second subassemblies, the at least one opening having an inclined wall at an angle relative to a normal direction with respect to the plane defined by the front faces of the microelectronic elements; and e) severing the joined microelectronic assemblies along edges of the microelectronic elements into stacked microelectronic units, such that edge surfaces of the microelectronic units include an inclined wall of the at least one opening, each microelectronic unit including leads extending along the surface of the at least one inclined wall. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A method of fabricating a stacked microelectronic unit, comprising:
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a) stacking and joining a plurality of microelectronic elements, each of the microelectronic elements having a front face, a rear face remote from the front face, contacts exposed at the front face, edges extending between the front and rear faces and traces connected to the contacts extending along the front face towards the edges, the front faces of at least some of the microelectronic elements overlying and confronting the rear faces of other microelectronic elements; and b) forming a plurality of conductors extending along the edges of the microelectronic elements from the traces to unit contacts overlying and adjacent to rear faces of microelectronic elements of the at least some microelectronic elements. - View Dependent Claims (33, 35)
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34. A stacked microelectronic unit, the stacked unit having a top face, unit contacts exposed at the top face and a bottom face remote from the top face, the stacked unit comprising:
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a) a plurality of vertically stacked microelectronic elements each having a front surface, a rear surface, contacts exposed at the front surface, edges extending between the front and rear surfaces, traces connected to the contacts extending along the front surfaces towards the edges, the rear surface of at least one of the stacked microelectronic elements being adjacent to the top face of the microelectronic unit; b) a plurality of conductors extending along the edges of the microelectronic elements from the traces to the top surface, the conductors conductively connected with the unit contacts, such that the unit contacts overlie the rear surface of the at least one microelectronic element adjacent to the top face. - View Dependent Claims (37)
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36. A stacked microelectronic unit, comprising:
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first and second vertically stacked microelectronic elements, each having a front surface defining a lateral direction, at least one edge extending away from the front surface, contacts exposed at the front surface, and traces extending from the contacts toward the edges, the front surface of the second microelectronic element at least partially overlying the front surface of the first microelectronic element, the second microelectronic element having at least one edge displaced in the lateral direction from an adjacent edge of the first microelectronic element; a dielectric layer overlying the laterally displaced edges of the microelectronic elements, the dielectric layer defining an edge of the stacked unit; and leads connected to traces at front faces of the microelectronic elements, the leads extending along the edges of the microelectronic elements to unit contacts.
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38. A stacked microelectronic unit, comprising:
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first and second vertically stacked microelectronic elements, wherein at least one first edge of the first microelectronic element at a first level extends beyond a corresponding first edge of the second microelectronic element at a second level overlying the first level; a dielectric layer overlying the first edges of the first and second microelectronic elements, the dielectric layer defining a first edge of the stacked unit; and conductive vias extending through the dielectric layer, the vias being connected to traces at front faces of the microelectronic elements.
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39. A stacked microelectronic unit, comprising:
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first and second vertically stacked microelectronic elements, wherein a front face of the first microelectronic element overlies at least one of a front face or a rear face of the second microelectronic element and at least one of a width or a length of the front faces of the first and second microelectronic elements differing; a dielectric layer overlying the first edges of the first and second microelectronic elements; and leads connected to traces at front faces of the microelectronic elements, the leads extending along a first edge of the stacked unit.
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Specification