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FLASH MULTI-LEVEL THRESHOLD DISTRIBUTION SCHEME

  • US 20110007564A1
  • Filed: 09/17/2010
  • Published: 01/13/2011
  • Est. Priority Date: 09/13/2006
  • Status: Active Grant
First Claim
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1. A method for reading a Flash memory cell capable of storing at least first and second threshold voltages in an erase voltage domain, comprising:

  • precharging a bitline coupled to the flash memory cell to a precharge voltage level;

    driving a selected wordline connected to the flash memory cell with a reference voltage, the reference voltage being greater than the first threshold voltage and less than the second threshold voltage; and

    ,sensing a change in the precharge voltage level when the reference voltage is greater than the first threshold voltage.

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