SEMICONDUCTOR LASER APPARATUS, METHOD OF MANUFACTURING THE SAME AND OPTICAL APPARATUS

• US 20110007771A1
• Filed: 07/06/2010
• Published: 01/13/2011
• Est. Priority Date: 07/08/2009
• Status: Abandoned Application

• Current Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: SHIMIZU, Gen, MIHASHI, Daiki, BESSHO, Yasuyuki, OOTA, Kiyoshi, GONSUI, Koji
• Application Number:
  US12/831,000
• Publication Number:
  US 20110007771A1
• Time in Patent Office: Days
• US Class Current: 372/50.121
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G11B 7/1275 Two or more lasers having different wavelengths
• CPC Class Codes: H01L 2224/83191 wherein the layer connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01S 5/0207 Substrates having a special shape
• CPC Class Codes: H01S 5/02212 Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
• CPC Class Codes: H01S 5/0234 Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
• CPC Class Codes: H01S 5/0237 by soldering
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/34326 with a well layer based on InGa(Al)P, e.g. red laser
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
• CPC Class Codes: H01S 5/4031 Edge-emitting structures
• CPC Class Codes: H01S 5/4087 emitting more than one wavelength

Abstract

This semiconductor laser apparatus includes a support member having a main surface, a first semiconductor laser device bonded onto the main surface through a first bonding layer and a second semiconductor laser device bonded onto the main surface through a second bonding layer to be adjacent to the first semiconductor laser device. The melting point of the second bonding layer is lower than that of the first bonding layer, and a first height from the main surface to a fourth surface of the second semiconductor laser device is larger than a second height from the main surface to a second surface of the first semiconductor laser device.

Claims

1. A semiconductor laser apparatus comprising:

a support member having a main surface;

a first semiconductor laser device bonded onto said main surface through a first bonding layer; and

a second semiconductor laser device bonded onto said main surface through a second bonding layer, wherein

said first semiconductor laser device has a first surface and a second surface opposite to said first surface,

said second semiconductor laser device has a third surface and a fourth surface opposite to said third surface,

said second semiconductor laser device is arranged to be adjacent to said first semiconductor laser device,

said first surface of said first semiconductor laser device is bonded onto said main surface,

said third surface of said second semiconductor laser device is bonded onto said main surface,

the melting point of said second bonding layer is lower than that of said first bonding layer, and

a first height from said main surface to said fourth surface is larger than a second height from said main surface to said second surface.

2. The semiconductor laser apparatus according to claim 1, wherein

said first semiconductor laser device has a first semiconductor substrate on a side closer to said second surface and a first semiconductor device layer on a side closer to said first surface, and

said second semiconductor laser device has a second semiconductor substrate on a side closer to said fourth surface and a second semiconductor device layer on a side closer to said third surface.

3. The semiconductor laser apparatus according to claim 2, wherein

said first semiconductor laser device has a first electrode formed on said side closer to said first surface, and

said second semiconductor laser device has a second electrode formed on said side closer to said third surface.

4. The semiconductor laser apparatus according to claim 3, wherein

at least either said first electrode or said second electrode includes a multilayer structure in which a first Ti layer, an Au layer and a second Ti layer are arranged in this order from a side closer to said main surface.

5. The semiconductor laser apparatus according to claim 4, wherein

a thickness of said first Ti layer is larger than that of said second Ti layer.

6. The semiconductor laser apparatus according to claim 4, wherein

an ohmic electrode layer is arranged between said second Ti layer and at least either said first semiconductor device layer or said second semiconductor device layer.

7. The semiconductor laser apparatus according to claim 1, wherein

said first bonding layer includes Au and Sn,

said second bonding layer includes Au and Sn, and

a ratio of Au to Sn in said first bonding layer is larger than a ratio of Au to Sn in said second bonding layer.

8. The semiconductor laser apparatus according to claim 1, wherein

a thickness of said first bonding layer and a thickness of said second bonding layer are substantially equal to each other.

9. The semiconductor laser apparatus according to claim 1, wherein

said support member is a heat radiation substrate.

10. The semiconductor laser apparatus according to claim 1, wherein

at least either said first semiconductor laser device or said second semiconductor laser device is formed by a multiple wavelength semiconductor laser device emitting laser beams having lasing wavelengths different from each other.

11. The semiconductor laser apparatus according to claim 1, wherein

an interval between said first semiconductor laser device and said second semiconductor laser device is narrow on a side closer to said main surface and becomes wider with increasing distance from said main surface.

12. The semiconductor laser apparatus according to claim 11, wherein

a cross section of at least either said first semiconductor laser device or said second semiconductor laser device is substantially parallelogram shaped.

13. The semiconductor laser apparatus according to claim 10, wherein

said multiple wavelength semiconductor laser device has a common semiconductor substrate.

14. The semiconductor laser apparatus according to claim 1, wherein

one of either said first semiconductor laser device or said second semiconductor laser device is a nitride-based semiconductor laser device, and the other of either said first semiconductor laser device or said second semiconductor laser device is a GaInP-based semiconductor laser device or a GaAs-based semiconductor laser device.

15. A method of manufacturing a semiconductor laser apparatus comprising steps of:

bonding a first semiconductor laser device onto a main surface of a support member through a first bonding layer; and

bonding a second semiconductor laser device onto said main surface through a second bonding layer to be adjacent to said first semiconductor laser device after said step of bonding said first semiconductor laser device, wherein

said first semiconductor laser device has a first surface and a second surface opposite to said first surface,

said second semiconductor laser device has a third surface and a fourth surface opposite to said third surface,

said first surface of said first semiconductor laser device is bonded onto said main surface,

said third surface of said second semiconductor laser device is bonded onto said main surface, and

a first height from said main surface to said fourth surface is larger than a second height from said main surface to said second surface.

16. The method of manufacturing a semiconductor laser apparatus according to claim 15, wherein

the melting point of said second bonding layer is lower than the melting point of said first bonding layer, and

said step of bonding said second semiconductor laser device has heat treatment performed at a temperature lower than the melting point of said first bonding layer and higher than the melting point of said second bonding layer.

17. The method of manufacturing a semiconductor laser apparatus according to claim 15, further comprising a step of forming said first bonding layer on said main surface before said step of bonding said first semiconductor laser device, wherein

said step of bonding said first semiconductor laser device includes a step of bonding said first surface to said first bonding layer.

18. The method of manufacturing a semiconductor laser apparatus according to claim 15, further comprising a step of forming said second bonding layer on said third surface before said step of bonding said second semiconductor laser device, wherein

said step of bonding said second semiconductor laser device includes a step of bonding said second bonding layer to said main surface.

19. The method of manufacturing a semiconductor laser apparatus according to claim 15, further comprising a step of placing a pellet made of a bonding material on said main surface before said step of bonding said second semiconductor laser device, wherein

said step of bonding said second semiconductor laser device includes a step of pressing said second semiconductor laser device to said pellet.

20. An optical apparatus comprising:

a semiconductor laser apparatus; and

an optical system adjusting a laser beam emitted from said semiconductor laser apparatus, wherein

said semiconductor laser apparatus includes a support member having a main surface, a first semiconductor laser device bonded onto said main surface through a first bonding layer and a second semiconductor laser device bonded onto said main surface through a second bonding layer, wherein

said first semiconductor laser device has a first surface and a second surface opposite to said first surface,

said second semiconductor laser device has a third surface and a fourth surface opposite to said third surface,

said second semiconductor laser device is arranged to be adjacent to said first semiconductor laser device,

said first surface of said first semiconductor laser device is bonded onto said main surface,

said third surface of said second semiconductor laser device is bonded onto said main surface,

the melting point of said second bonding layer is lower than that of said first bonding layer, and

a first height from said main surface to said fourth surface is larger than a second height from said main surface to said second surface.