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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20110008930A1
  • Filed: 06/29/2010
  • Published: 01/13/2011
  • Est. Priority Date: 06/30/2009
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming an oxide semiconductor layer on an insulating layer;

    performing dehydration or dehydrogenation on the oxide semiconductor layer and then cooling the oxide semiconductor layer in an oxygen atmosphere;

    forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer after dehydration or dehydrogenation have been performed on the oxide semiconductor layer; and

    forming an oxide insulating film over the insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and in contact with part of the oxide semiconductor layer.

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