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Remote Hydrogen Plasma With Ion Filter for Terminating Silicon Dangling Bonds

  • US 20110008950A1
  • Filed: 04/09/2010
  • Published: 01/13/2011
  • Est. Priority Date: 04/20/2009
  • Status: Active Grant
First Claim
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1. A method of processing a silicon layer on a substrate comprising:

  • disposing a substrate in a chamber having a remote plasma source coupled thereto;

    processing a silicon layer and creating dangling silicon bonds in the silicon layer;

    generating a hydrogen plasma in the remote plasma source, the hydrogen plasma comprising a mixture including hydrogen radicals and ions;

    passing the hydrogen plasma through an ion filter to remove substantially all of the ions, creating a filtered hydrogen plasma; and

    exposing the silicon layer containing dangling bonds to the filtered hydrogen plasma to remove dangling silicon bonds.

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